Inventor · disambiguated record
Michael Mian
Also filed as: MIAN MICHAEL
22 granted patents·336 citations·filing 2002–2006
96Inventor score
Top patents by PatentIndex Score
22 records- 0194US6958194B1Imager with improved sensitivityFOVEON INC·Filed 2003·Granted Oct 25, 2005·83 cites·29 claims
- 0291US7373833B2MEMS pressure sensing deviceNAT SEMICONDUCTOR CORP·Filed 2006·Granted May 20, 2008·21 cites·9 claims
- 0390US7301212B1MEMS microphoneNAT SEMICONDUCTOR CORP·Filed 2004·Granted Nov 27, 2007·54 cites·19 claims
- 0489US6963091B1Spin-injection devices on silicon material for conventional BiCMOS technologyNAT SEMICONDUCTOR CORP·Filed 2003·Granted Nov 8, 2005·43 cites·7 claims
- 0577US6956269B1Spin-polarization of carriers in semiconductor materials for spin-based microelectronic devicesNAT SEMICONDUCTOR CORP·Filed 2003·Granted Oct 18, 2005·21 cites·20 claims
- 0676US7328609B1Wireless pressure sensing Schrader valveNAT SEMICONDUCTOR CORP·Filed 2004·Granted Feb 12, 2008·14 cites·2 claims
- 0775US7022532B1Method of making spin-injection devices on silicon material for conventional BiCMOS technologyNAT SEMICONDUCTOR CORP·Filed 2005·Granted Apr 4, 2006·5 cites·8 claims
- 0872US7105906B1Photodiode that reduces the effects of surface recombination sitesNAT SEMICONDUCTOR CORP·Filed 2003·Granted Sep 12, 2006·14 cites·20 claims
- 0971US6864581B1Etched metal trace with reduced RF impendance resulting from the skin effectNAT SEMICONDUCTOR CORP·Filed 2002·Granted Mar 8, 2005·14 cites·13 claims
- 1068US6853079B1Conductive trace with reduced RF impedance resulting from the skin effectNAT SEMICONDUCTOR CORP·Filed 2002·Granted Feb 8, 2005·12 cites·8 claims
- 1167US7022968B1Optical sensor that measures the light output by the combustion chamber of an internal combustion engineNAT SEMICONDUCTOR CORP·Filed 2003·Granted Apr 4, 2006·10 cites·20 claims
- 1266US7239712B1Inductor-based MEMS microphoneNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jul 3, 2007·10 cites·14 claims
- 1363US6703710B1Dual damascene metal trace with reduced RF impedance resulting from the skin effectNAT SEMICONDUCTOR CORP·Filed 2002·Granted Mar 9, 2004·9 cites·20 claims
- 1461US7057174B1High-speed photon detector and method of forming the detectorNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jun 6, 2006·8 cites·21 claims
- 1560US7121146B1MEMS pressure sensing deviceNAT SEMICONDUCTOR CORP·Filed 2004·Granted Oct 17, 2006·8 cites·9 claims
- 1656US7642116B1Method of forming a photodiode that reduces the effects of surface recombination sitesNAT SEMICONDUCTOR CORP·Filed 2006·Granted Jan 5, 2010·0 cites·20 claims
- 1753US6740956B1Metal trace with reduced RF impedance resulting from the skin effectNAT SEMICONDUCTOR CORP·Filed 2002·Granted May 25, 2004·4 cites·17 claims
- 1848US7309639B1Method of forming a metal trace with reduced RF impedance resulting from the skin effectNAT SEMICONDUCTOR CORP·Filed 2004·Granted Dec 18, 2007·2 cites·17 claims
- 1945US8004061B1Conductive trace with reduced RF impedance resulting from the skin effectNAT SEMICONDUCTOR CORP·Filed 2004·Granted Aug 23, 2011·1 cites·20 claims
- 2045US7223680B1Method of forming a dual damascene metal trace with reduced RF impedance resulting from the skin effectNAT SEMICONDUCTOR CORP·Filed 2003·Granted May 29, 2007·1 cites·16 claims
- 2145US7098044B1Method of forming an etched metal trace with reduced RF impedance resulting from the skin effectNAT SEMICONDUCTOR CORP·Filed 2004·Granted Aug 29, 2006·1 cites·20 claims
- 2239US7021151B1MEMS pressure sensing array with leaking sensorNAT SEMICONDUCTOR CORP·Filed 2004·Granted Apr 4, 2006·1 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →