Inventor · disambiguated record
Marc Strasser
Also filed as: STRASSER MARC
10 granted patents·3 pending applications·131 citations·filing 2004–2014
87Inventor score
Top patents by PatentIndex Score
13 records- 0194US7288435B2Method for producing a cover, method for producing a packaged deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 30, 2007·89 cites·13 claims
- 0285US7763513B2Integrated circuit device and method of manufactureQIMONDA AG·Filed 2005·Granted Jul 27, 2010·15 cites·10 claims
- 0381US7442609B2Method of manufacturing a transistor and a method of forming a memory device with isolation trenchesINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 28, 2008·10 cites·29 claims
- 0469US8686505B2Lateral semiconductor device and manufacturing method thereforSTRASSER MARC·Filed 2012·Granted Apr 1, 2014·4 cites·25 claims
- 0568US9450019B2Power semiconductor device, manufacturing method therefor, and method for operating the power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Sep 20, 2016·2 cites·20 claims
- 0666US8994113B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Mar 31, 2015·2 cites·20 claims
- 0763US6955950B2Method for generating a protective cover for a deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 18, 2005·9 cites·20 claims
- 0847US9000520B2Semiconductor device with an insulating structure for insulating an electrode from a semiconductor bodyINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2014·Granted Apr 7, 2015·0 cites·10 claims
- 0944US7763955B2Reducing shunt currents in a semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jul 27, 2010·0 cites·23 claims
- 1042US7605032B2Method for producing a trench transistor and trench transistorQIMONDA AG·Filed 2006·Granted Oct 20, 2009·0 cites·19 claims
- 1139US2007082454A1Microelectronic device and method of manufacturing a microelectronic deviceINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1238US2007040202A1Semiconductor memory cell array having self-aligned recessed gate MOS transistors and method for forming the sameINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1331US2006118851A1Memory cell and integrated memory circuitSTRASSER MARC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →