Inventor · disambiguated record
Chung P. Wu
Also filed as: WU CHUNG P · WU CHUNG PAO
18 granted patents·798 citations·filing 1975–1986
96Inventor score
Top patents by PatentIndex Score
18 records- 0196US4322253AMethod of making selective crystalline silicon regions containing entrapped hydrogen by laser treatmentRCA CORP·Filed 1980·Granted Mar 30, 1982·132 cites·5 claims
- 0293US4439245AElectromagnetic radiation annealing of semiconductor materialRCA CORP·Filed 1982·Granted Mar 27, 1984·100 cites·7 claims
- 0392US4584026AIon-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ionsRCA CORP·Filed 1984·Granted Apr 22, 1986·91 cites·10 claims
- 0490US4560879AMethod and apparatus for implantation of doubly-charged ionsRCA CORP·Filed 1983·Granted Dec 24, 1985·44 cites·15 claims
- 0589US4786814AMethod of reducing electrostatic charge on ion-implanted devicesGEN ELECTRIC·Filed 1983·Granted Nov 22, 1988·38 cites·4 claims
- 0688US4595837AMethod for preventing arcing in a device during ion-implantationRCA CORP·Filed 1985·Granted Jun 17, 1986·47 cites·7 claims
- 0788US4198246APulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon filmRCA CORP·Filed 1978·Granted Apr 15, 1980·47 cites·8 claims
- 0886US3933530AMethod of radiation hardening and gettering semiconductor devicesRCA CORP·Filed 1975·Granted Jan 20, 1976·51 cites·7 claims
- 0985US4249960ALaser rounding a sharp semiconductor projectionRCA CORP·Filed 1979·Granted Feb 10, 1981·40 cites·8 claims
- 1084US4229502ALow-resistivity polycrystalline silicon filmRCA CORP·Filed 1979·Granted Oct 21, 1980·42 cites·11 claims
- 1175US4319954AMethod of forming polycrystalline silicon lines and vias on a silicon substrateRCA CORP·Filed 1981·Granted Mar 16, 1982·40 cites·10 claims
- 1273US4230505AMethod of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removalRCA CORP·Filed 1979·Granted Oct 28, 1980·26 cites·13 claims
- 1371US4684964ASilicon light emitting device and a method of making the deviceRCA CORP·Filed 1986·Granted Aug 4, 1987·36 cites·2 claims
- 1469US4392011ASolar cell structure incorporating a novel single crystal silicon materialRCA CORP·Filed 1981·Granted Jul 5, 1983·28 cites·5 claims
- 1551US4502206AMethod of forming semiconductor contacts by implanting ions of neutral species at the interfacial regionRCA CORP·Filed 1983·Granted Mar 5, 1985·10 cites·9 claims
- 1644US4525221AAlloying of aluminum metallizationRCA CORP·Filed 1984·Granted Jun 25, 1985·11 cites·8 claims
- 1741US4472210AMethod of making a semiconductor device to improve conductivity of amorphous silicon filmsRCA CORP·Filed 1983·Granted Sep 18, 1984·13 cites·10 claims
- 1832US3976377AMethod of obtaining the distribution profile of electrically active ions implanted in a semiconductorRCA CORP·Filed 1975·Granted Aug 24, 1976·2 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →