Inventor · disambiguated record
Haichun Yang
Also filed as: YANG HAICHUN
15 granted patents·8 pending applications·129 citations·filing 2007–2024
90Inventor score
Files withAPPLIED MATERIALS INC9MATTSON TECH INC8BEIJING E TOWN SEMICONDUCTOR TECH CO LTD2UNIV VANDERBILT2KAO CHIEN-TEH1
Top patents by PatentIndex Score
23 records- 0197US7871926B2Methods and systems for forming at least one dielectric layerAPPLIED MATERIALS INC·Filed 2007·Granted Jan 18, 2011·77 cites·17 claims
- 0293US7585762B2Vapor deposition processes for tantalum carbide nitride materialsAPPLIED MATERIALS INC·Filed 2007·Granted Sep 8, 2009·24 cites·23 claims
- 0391US7780793B2Passivation layer formation by plasma clean process to reduce native oxide growthAPPLIED MATERIALS INC·Filed 2007·Granted Aug 24, 2010·19 cites·24 claims
- 0482US10692730B1Silicon oxide selective dry etch processMATTSON TECH INC·Filed 2019·Granted Jun 23, 2020·2 cites·17 claims
- 0575US8252696B2Selective etching of silicon nitrideLU XINLIANG·Filed 2008·Granted Aug 28, 2012·5 cites·16 claims
- 0670US11791166B2Selective etch process using hydrofluoric acid and ozone gasesMATTSON TECH INC·Filed 2021·Granted Oct 17, 2023·0 cites·6 claims
- 0765US11183397B2Selective etch process using hydrofluoric acid and ozone gasesMATTSON TECH INC·Filed 2020·Granted Nov 23, 2021·0 cites·8 claims
- 0864US11251050B2Silicon oxide selective dry etch processMATTSON TECH INC·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 0964US7989339B2Vapor deposition processes for tantalum carbide nitride materialsAPPLIED MATERIALS INC·Filed 2010·Granted Aug 2, 2011·1 cites·19 claims
- 1063US8318605B2Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphereKAO CHIEN-TEH·Filed 2008·Granted Nov 27, 2012·1 cites·20 claims
- 1163US2024404797A1Workpiece Processing Apparatus and Methods for the Treatment of WorkpiecesBEIJING E TOWN SEMICONDUCTOR TECH CO LTD·Filed 2024·Application pending·0 cites
- 1260US2023355549A1Method of preventing kidney injury disruption of intestinal lymphaticsUNIV VANDERBILT·Filed 2023·Application pending·0 cites
- 1359US2024165659A1Methods of processing workpieces using organic radicalsBEIJING E TOWN SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 1457US11315801B2Processing of workpieces using ozone gas and hydrogen radicalsMATTSON TECH INC·Filed 2021·Granted Apr 26, 2022·0 cites·19 claims
- 1555US11164727B2Processing of workpieces using hydrogen radicals and ozone gasMATTSON TECH INC·Filed 2020·Granted Nov 2, 2021·0 cites·16 claims
- 1655US7977246B2Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphereAPPLIED MATERIALS INC·Filed 2008·Granted Jul 12, 2011·0 cites·19 claims
- 1755US7678298B2Tantalum carbide nitride materials by vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Mar 16, 2010·0 cites·10 claims
- 1855US2025182297A1Systems and Methods for Pathological Image Segmentation via Molecular-Empowered LearningUNIV VANDERBILT·Filed 2024·Application pending·0 cites
- 1951US11791181B2Methods for the treatment of workpiecesMATTSON TECH INC·Filed 2020·Granted Oct 17, 2023·0 cites·16 claims
- 2048US2010099263A1Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defectsAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2147US2021343506A1Methods And Apparatus For Pulsed Inductively Coupled Plasma For Surface Treatment ProcessingMATTSON TECH INC·Filed 2021·Application pending·0 cites
- 2246US2009191703A1Process with saturation at low etch amount for high contact bottom cleaning efficiency for chemical dry clean processAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2334US2015255324A1Seamless gap-fill with spatial atomic layer depositionAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
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