Inventor · disambiguated record
Sung-Nee George Chu
Also filed as: CHU SUNG-NEE G · CHU SUNG-NEE GEORGE
16 granted patents·3 pending applications·328 citations·filing 1985–2020
94Inventor score
Files withLUCENT TECHNOLOGIES INC7BEIJING TONGMEI XTAL TECH CO LTD4AGERE SYST GUARDIAN CORP1AMERICAN TELEPHONE & TELEGRAPH1AT & T BELL LAB1
Top patents by PatentIndex Score
19 records- 0194US6400744B1Apparatus comprising a quantum cascade laser having improved distributed feedback for single-mode operationLUCENT TECHNOLOGIES INC·Filed 2000·Granted Jun 4, 2002·77 cites·16 claims
- 0291US6664605B1Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAsTRIQUINT TECHNOLOGY HOLDING CO·Filed 2000·Granted Dec 16, 2003·33 cites·52 claims
- 0378US6324199B1Intersubband light source with separate electron injector and reflector/extractorLUCENT TECHNOLOGIES INC·Filed 1998·Granted Nov 27, 2001·44 cites·13 claims
- 0475US5314838AMethod for making a semiconductor laserAT & T BELL LAB·Filed 1992·Granted May 24, 1994·39 cites·7 claims
- 0567US6265322B1Selective growth process for group III-nitride-based semiconductorsAGERE SYST GUARDIAN CORP·Filed 1999·Granted Jul 24, 2001·33 cites·10 claims
- 0666US5629233AMethod of making III/V semiconductor lasersLUCENT TECHNOLOGIES INC·Filed 1996·Granted May 13, 1997·35 cites·8 claims
- 0758US6829262B1Aging in tunable semiconductor lasersTRI QUINT TECHNOLOGY HOLDING C·Filed 2000·Granted Dec 7, 2004·6 cites·10 claims
- 0858US6556604B1Flat minibands with spatially symmetric wavefunctions in intersubband superlattice light emittersLUCENT TECHNOLOGIES INC·Filed 2000·Granted Apr 29, 2003·5 cites·16 claims
- 0957US11127867B2Monocrystalline germanium wafers, method for preparing the same, method for preparing ingots and use of monocrystalline wafersBEIJING TONGMEI XTAL TECH CO LTD·Filed 2018·Granted Sep 21, 2021·0 cites·18 claims
- 1057US6110438AMethod of making black phosphorus from red phosphorusLUCENT TECHNOLOGIES INC·Filed 1999·Granted Aug 29, 2000·19 cites·7 claims
- 1151US12336319B2Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal waferBEIJING TONGMEI XTAL TECH CO LTD·Filed 2020·Granted Jun 17, 2025·0 cites·20 claims
- 1250US6023482AArticle comprising a strain-compensated QC laserLUCENT TECHNOLOGIES INC·Filed 1998·Granted Feb 8, 2000·15 cites·12 claims
- 1348US5633193AMethod of making an InP-based device comprising semiconductor growth on a non-planar surfaceLUCENT TECHNOLOGIES INC·Filed 1996·Granted May 27, 1997·14 cites·9 claims
- 1444US11094549B2Indium phosphide wafer having pits on the back side, method and etching solution for manufacturing the sameBEIJING TONGMEI XTAL TECH CO LTD·Filed 2018·Granted Aug 17, 2021·0 cites·13 claims
- 1543US11376703B2Indium phosphide (InP) wafer having pits of olive-shape on the back side, method and etching solution for manufacturing the sameBEIJING TONGMEI XTAL TECH CO LTD·Filed 2018·Granted Jul 5, 2022·0 cites·15 claims
- 1643US2004213313A1Dopant diffusion blocking for optoelectronic devices using InAIAs or InGaAIAsFiled 2004·Application pending·0 cites
- 1741US4745447AGallium arsenide on gallium indium arsenide Schottky barrier deviceAMERICAN TELEPHONE & TELEGRAPH·Filed 1985·Granted May 17, 1988·8 cites·10 claims
- 1841US2003209771A1Dopant diffusion blocking for optoelectronic devices using InAlAs or InGaAlAsFiled 2003·Application pending·0 cites
- 1937US2002096675A1Intersubband optical devices that operate at wavelengths shorter than 1.7 umFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →