Inventor · disambiguated record
Hyun-Mog Park
Also filed as: PARK HYUN · PARK HYUN-MOG
47 granted patents·10 pending applications·619 citations·filing 2002–2025
98Inventor score
Top patents by PatentIndex Score
57 records- 0198US6861332B2Air gap interconnect methodINTEL CORP·Filed 2002·Granted Mar 1, 2005·250 cites·12 claims
- 0297US11270987B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 8, 2022·4 cites·20 claims
- 0396US10998301B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 4, 2021·13 cites·20 claims
- 0496US10734371B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 4, 2020·15 cites·20 claims
- 0595US12334471B2Semiconductor devices and manufacturing methods of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 17, 2025·2 cites·8 claims
- 0695US11664362B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 30, 2023·2 cites·20 claims
- 0795US11114463B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 7, 2021·3 cites·19 claims
- 0895US10854622B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 1, 2020·3 cites·20 claims
- 0993US11417772B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 16, 2022·3 cites·11 claims
- 1093US10396035B2Three-dimensional semiconductor device having contact plugs penetrating upper adjacent electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·8 cites·19 claims
- 1192US10748886B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 18, 2020·6 cites·20 claims
- 1291US10680007B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 9, 2020·5 cites·18 claims
- 1390US6867125B2Creating air gap in multi-level metal interconnects using electron beam to remove sacrificial materialINTEL CORP·Filed 2002·Granted Mar 15, 2005·54 cites·16 claims
- 1489US7238604B2Forming thin hard mask over air gap or porous dielectricINTEL CORP·Filed 2003·Granted Jul 3, 2007·42 cites·26 claims
- 1588US7335586B2Sealing porous dielectric material using plasma-induced surface polymerizationINTEL CORP·Filed 2005·Granted Feb 26, 2008·12 cites·33 claims
- 1687US11127828B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 21, 2021·3 cites·11 claims
- 1787US10325992B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 18, 2019·4 cites·17 claims
- 1887US7220668B2Method of patterning a porous dielectric materialINTEL CORP·Filed 2005·Granted May 22, 2007·11 cites·18 claims
- 1986US11735637B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·1 cites·11 claims
- 2086US10825832B2Semiconductor device including gatesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 3, 2020·2 cites·20 claims
- 2183US7675125B2NAND-type nonvolatile memory device and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 9, 2010·12 cites·18 claims
- 2283US6919637B2Interconnect structure for an integrated circuit and method of fabricationINTEL CORP·Filed 2002·Granted Jul 19, 2005·30 cites·9 claims
- 2383US6774032B1Method of making a semiconductor device by forming a masking layer with a tapered etch profileINTEL CORP·Filed 2003·Granted Aug 10, 2004·34 cites·15 claims
- 2483US2024315030A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2582US11211372B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 28, 2021·1 cites·20 claims
- 2681US12336260B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·18 claims
- 2781US11171116B2Semiconductor devices and manufacturing methods of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 9, 2021·2 cites·20 claims
- 2881US2025279399A1Semiconductor devices and manufacturing methods of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2980US11942463B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·6 claims
- 3080US10615124B2Three-dimensional semiconductor device including a cell array region and a contact regionSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 7, 2020·2 cites·18 claims
- 3179US7151051B2Interconnect structure for an integrated circuit and method of fabricationINTEL CORP·Filed 2005·Granted Dec 19, 2006·7 cites·11 claims
- 3278US9202819B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 1, 2015·4 cites·14 claims
- 3377US10553605B2Semiconductor device including gatesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 4, 2020·2 cites·19 claims
- 3475US12035528B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·19 claims
- 3573US6903461B2Semiconductor device having a region of a material which is vaporized upon exposing to ultraviolet radiationINTEL CORP·Filed 2003·Granted Jun 7, 2005·16 cites·9 claims
- 3673US6743712B2Method of making a semiconductor device by forming a masking layer with a tapered etch profileINTEL CORP·Filed 2002·Granted Jun 1, 2004·16 cites·8 claims
- 3773US6734094B2Method of forming an air gap within a structure by exposing an ultraviolet sensitive material to ultraviolet radiationINTEL CORP·Filed 2002·Granted May 11, 2004·16 cites·17 claims
- 3872US7332406B2Air gap interconnect structure and methodINTEL CORP·Filed 2004·Granted Feb 19, 2008·11 cites·20 claims
- 3970US6620741B1Method for controlling etch bias of carbon doped oxide filmsINTEL CORP·Filed 2002·Granted Sep 16, 2003·12 cites·30 claims
- 4070US2022336672A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4169US10438802B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 8, 2019·1 cites·18 claims
- 4268US10741571B2Vertical memory devices and methods of manufacturing the sameYOON YOUNG-BAE·Filed 2017·Granted Aug 11, 2020·1 cites·17 claims
- 4366US11721684B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 4452US7179755B2Forming a porous dielectric layer and structures formed therebyINTEL CORP·Filed 2004·Granted Feb 20, 2007·3 cites·18 claims
- 4551US10937756B2Method of aligning wafers, method of bonding wafers using the same, and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·11 claims
- 4651US2007042598A1Dielectric with sidewall passivating layerPARK HYUN-MOG·Filed 2006·Application pending·0 cites
- 4750US7544896B2Forming a porous dielectric layer and structures formed therebyINTEL CORP·Filed 2006·Granted Jun 9, 2009·0 cites·7 claims
- 4848US7176122B2Dielectric with sidewall passivating layerINTEL CORP·Filed 2003·Granted Feb 13, 2007·1 cites·20 claims
- 4947US7303648B2Via etch processINTEL CORP·Filed 2004·Granted Dec 4, 2007·2 cites·10 claims
- 5047US7049053B2Supercritical carbon dioxide to reduce line edge roughnessINTEL CORP·Filed 2003·Granted May 23, 2006·3 cites·16 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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