Inventor · disambiguated record
Shigemitsu Fukatsu
Also filed as: FUKATSU SHIGEMITSU
10 granted patents·1 pending application·119 citations·filing 1992–2013
90Inventor score
Top patents by PatentIndex Score
11 records- 0186US9324848B2Semiconductor deviceDENSO CORP·Filed 2013·Granted Apr 26, 2016·9 cites·4 claims
- 0285US8659065B2Semiconductor device and method of manufacturing the sameSUMITOMO MASAKIYO·Filed 2011·Granted Feb 25, 2014·10 cites·15 claims
- 0363US5834347AMIS type semiconductor device and method for manufacturing sameNIPPON DENSO CO·Filed 1997·Granted Nov 10, 1998·23 cites·12 claims
- 0461US6339557B1Charge retention lifetime evaluation method for nonvolatile semiconductor memoryDENSO CORP·Filed 2000·Granted Jan 15, 2002·12 cites·30 claims
- 0560US9178050B2Load-short-circuit-tolerant semiconductor device having trench gatesHIGUCHI YASUSHI·Filed 2012·Granted Nov 3, 2015·2 cites·8 claims
- 0657US5830771AManufacturing method for semiconductor deviceNIPPON DENSO CO·Filed 1995·Granted Nov 3, 1998·19 cites·23 claims
- 0752US5877531AMIS type semiconductor device and method for manufacturing sameNIPPON DENSO CO·Filed 1998·Granted Mar 2, 1999·14 cites·8 claims
- 0846US5986302ASemiconductor memory deviceDENSO CORP·Filed 1998·Granted Nov 16, 1999·11 cites·37 claims
- 0942US6537884B1Semiconductor device and method of manufacturing the same including an offset-gate structureDENSO CORP·Filed 1999·Granted Mar 25, 2003·9 cites·10 claims
- 1039US2014209972A1Semiconductor deviceDENSO CORP·Filed 2012·Application pending·0 cites
- 1138US5279981AMethod of reducing the trap density of an oxide film for application to fabricating a nonvolatile memory cellNIPPON DENSO CO·Filed 1992·Granted Jan 18, 1994·10 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →