Inventor · disambiguated record
Masaru Nakamichi
Also filed as: NAKAMICHI MASARU
20 granted patents·3 pending applications·193 citations·filing 2002–2025
95Inventor score
Files withRENESAS ELECTRONICS CORP5HITACHI ULSI SYS CO LTD4RENESAS TECH CORP4NATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECH3OSADA KENICHI3
Top patents by PatentIndex Score
23 records- 0196US7371631B2Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2005·Granted May 13, 2008·42 cites·15 claims
- 0296US6998674B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2005·Granted Feb 14, 2006·28 cites·6 claims
- 0395US7863135B2Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Jan 4, 2011·21 cites·9 claims
- 0494US7663176B2Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2008·Granted Feb 16, 2010·28 cites·19 claims
- 0593US7964484B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2009·Granted Jun 21, 2011·14 cites·3 claims
- 0692US8797791B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 5, 2014·7 cites·2 claims
- 0790US7569881B2Semiconductor integrated circuit device with reduced leakage currentRENESAS TECH CORP·Filed 2008·Granted Aug 4, 2009·9 cites·18 claims
- 0889US7087942B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2005·Granted Aug 8, 2006·9 cites·12 claims
- 0986US2025365962A1Memory device and method for forming the sameMACRONIX INT CO LTD·Filed 2025·Application pending·0 cites
- 1085US7388238B2Semiconductor integrated circuit device with reduced leakage currentRENESAS TECH CORP·Filed 2006·Granted Jun 17, 2008·6 cites·14 claims
- 1182US8437179B2Semiconductor integrated circuit device with reduced leakage currentOSADA KENICHI·Filed 2012·Granted May 7, 2013·3 cites·5 claims
- 1281US12473205B2Beryllium solution production method, beryllium production method, beryllium hydroxide production method, beryllium oxide production method, solution production device, beryllium production system, and berylliumNATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECH·Filed 2020·Granted Nov 18, 2025·1 cites·10 claims
- 1379US9111636B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 18, 2015·2 cites·6 claims
- 1478US6885057B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2002·Granted Apr 26, 2005·12 cites·8 claims
- 1574US9530485B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2015·Granted Dec 27, 2016·1 cites·15 claims
- 1673US12408342B2Memory device with multi-layered charge storage stackMACRONIX INT CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·10 claims
- 1770US8232589B2Semiconductor integrated circuit device with reduced leakage currentOSADA KENICHI·Filed 2012·Granted Jul 31, 2012·1 cites·16 claims
- 1870US8125017B2Semiconductor integrated circuit device with reduced leakage currentOSADA KENICHI·Filed 2011·Granted Feb 28, 2012·1 cites·12 claims
- 1968US8390048B2Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory deviceSAKAI TAKESHI·Filed 2010·Granted Mar 5, 2013·2 cites·14 claims
- 2060US12467115B2Method for producing beryllium solution, method for producing beryllium, method for producing beryllium hydroxide, method for producing beryllium oxide, and beryllium oxideNATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECH·Filed 2020·Granted Nov 11, 2025·0 cites·10 claims
- 2156US2024158249A1Method for producing inorganic solution, and apparatus for producing inorganic solutionNATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECH·Filed 2022·Application pending·0 cites
- 2254US7045864B2Semiconductor integrated circuit deviceHITACHI ULSI SYS CO LTD·Filed 2002·Granted May 16, 2006·6 cites·5 claims
- 2339US2008029825A1Semiconductor device and method of manufacturing the sameSAITO KENTARO·Filed 2007·Application pending·0 cites
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