Inventor · disambiguated record
Asli Sirman
Also filed as: SIRMAN ASLI
7 granted patents·4 pending applications·5 citations·filing 2011–2023
75Inventor score
Top patents by PatentIndex Score
11 records- 0177US10431500B1Multi-step insulator formation in trenches to avoid seams in insulatorsGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·2 cites·19 claims
- 0272US9145618B2High rate electric field driven nanoelement assembly on an insulated surfaceSIRMAN ASLI·Filed 2011·Granted Sep 29, 2015·3 cites·31 claims
- 0363US12446396B2Organic light-emitting diode displays with planarization layersAPPLE INC·Filed 2022·Granted Oct 14, 2025·0 cites·16 claims
- 0459US10964599B2Multi-step insulator formation in trenches to avoid seams in insulatorsGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 30, 2021·0 cites·18 claims
- 0559US2019211467A1High Rate Electric Field Driven Nanoelement Assembly on an Insulated SurfaceUNIV NORTHEASTERN·Filed 2019·Application pending·0 cites
- 0657US10233559B2High rate electric field driven nanoelement assembly on an insulated surfaceUNIV NORTHEASTERN·Filed 2016·Granted Mar 19, 2019·0 cites·11 claims
- 0757US2024210995A1Stretchable DisplayAPPLE INC·Filed 2023·Application pending·0 cites
- 0854US9497855B2High rate electric field driven nanoelement assembly on an insulated surfaceUNIV NORTHEASTERN·Filed 2015·Granted Nov 15, 2016·0 cites·20 claims
- 0951US10192791B1Semiconductor devices with robust low-k sidewall spacers and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 29, 2019·0 cites·20 claims
- 1039US2020312775A1Semiconductor device having a barrier layer made of two dimensional materialsGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 1137US2019326112A1DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPACER CAVITY AND METHOD FOR PRODUCING THE SAMEGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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