Inventor · disambiguated record
Hidekuni Ishida
Also filed as: ISHIDA HIDEKUNI
5 granted patents·49 citations·filing 1976–1987
81Inventor score
Technology areasH10P
Top patents by PatentIndex Score
5 records- 0160US4778772AMethod of manufacturing a bipolar transistorTOSHIBA KK·Filed 1987·Granted Oct 18, 1988·19 cites·8 claims
- 0251US4226650AMethod of reducing emitter dip in transistors utilizing specifically paired dopantsTAKAHASHI KOUICHI·Filed 1978·Granted Oct 7, 1980·10 cites·4 claims
- 0347US4263067AFabrication of transistors having specifically paired dopantsTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Apr 21, 1981·10 cites·4 claims
- 0439US4667218ANPN transistor with base double doped with arsenic and boronTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted May 19, 1987·6 cites·5 claims
- 0533US4155802AMethod of producing semiconductor device involving the use of silicon nitride as an oxidation maskTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted May 22, 1979·4 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →