Inventor · disambiguated record
Han-Jen Yang
Also filed as: YANG HAN-JEN
17 granted patents·1 pending application·47 citations·filing 2013–2024
91Inventor score
Top patents by PatentIndex Score
18 records- 0193US9876005B2SCRS with checker board layoutsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·10 cites·20 claims
- 0292US9397098B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·13 cites·20 claims
- 0390US9728531B2Electrostatic discharge deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 8, 2017·5 cites·20 claims
- 0488US10854595B2Electrostatic discharge deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·3 cites·20 claims
- 0583US9812436B2SCRs with checker board layoutsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 7, 2017·3 cites·20 claims
- 0683US9147676B2SCRs with checker board layoutsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·5 cites·20 claims
- 0778US10777546B2Planar and non-planar FET-based electrostatic discharge protection devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 15, 2020·2 cites·20 claims
- 0878US2024347531A1Planar and non-planar fet-based electrostatic discharge protection devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0976US9349719B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 24, 2016·3 cites·20 claims
- 1072US11380673B2Electrostatic discharge deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 1169US12051691B2Planar and non-planar FET-based electrostatic discharge protection devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 30, 2024·0 cites·20 claims
- 1269US9583481B2Semiconductor device comprising plurality of conductive portions disposed within wells and a nanowire coupled to conductive portionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·2 cites·20 claims
- 1367US9559095B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 31, 2017·1 cites·20 claims
- 1462US10546850B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·0 cites·20 claims
- 1559US10163894B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·0 cites·20 claims
- 1659US10157905B2Electrostatic discharge deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 1757US10790274B2SCRs with checker board layoutsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 29, 2020·0 cites·20 claims
- 1855US9893052B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Han-Jen Yang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →