Inventor · disambiguated record
Philip L. Hower
Also filed as: HOWER PHILIP L · HOWER PHILIP LELAND
51 granted patents·5 pending applications·416 citations·filing 1976–2020
98Inventor score
Files withTEXAS INSTRUMENTS INC39DENISON MARIE3KAWAHARA HIDEAKI3UNITRODE CORP3WESTINGHOUSE ELECTRIC CORP2
Top patents by PatentIndex Score
56 records- 0198US7268045B2N-channel LDMOS with buried P-type region to prevent parasitic bipolar effectsTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 11, 2007·66 cites·6 claims
- 0295US6958515B2N-channel LDMOS with buried p-type region to prevent parasitic bipolar effectsTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 25, 2005·84 cites·8 claims
- 0388US8643099B2Integrated lateral high voltage MOSFETTEXAS INSTRUMENTS INC·Filed 2013·Granted Feb 4, 2014·7 cites·8 claims
- 0487US9985095B2Lateral MOSFET with buried drain extension layerTEXAS INSTRUMENTS INC·Filed 2016·Granted May 29, 2018·3 cites·18 claims
- 0587US9349933B2Vertical thermoelectric structuresTEXAS INSTRUMENTS INC·Filed 2014·Granted May 24, 2016·6 cites·20 claims
- 0685US7262109B2Integrated circuit having a transistor level top side wafer contact and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 28, 2007·15 cites·15 claims
- 0783US11152459B2Lateral MOSFET with buried drain extension layerTEXAS INSTRUMENTS INC·Filed 2020·Granted Oct 19, 2021·1 cites·27 claims
- 0881US8878330B2Integrated high voltage dividerKAWAHARA HIDEAKI·Filed 2012·Granted Nov 4, 2014·5 cites·22 claims
- 0981US8853029B2Method of making vertical transistor with graded field plate dielectricDENISON MARIE·Filed 2011·Granted Oct 7, 2014·5 cites·7 claims
- 1080US7605412B2Distributed high voltage JFETTEXAS INSTRUMENTS INC·Filed 2006·Granted Oct 20, 2009·7 cites·10 claims
- 1178US8728846B2Vertical thermoelectric structuresMALE BARRY JON·Filed 2009·Granted May 20, 2014·8 cites·6 claims
- 1276US7846789B2Isolation trench with rounded corners for BiCMOS processTEXAS INSTRUMENTS INC·Filed 2007·Granted Dec 7, 2010·6 cites·14 claims
- 1374US9843322B2Integrated high-side driver for P-N bimodal power deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Dec 12, 2017·2 cites·18 claims
- 1474US9543149B2High voltage lateral extended drain MOS transistor with improved drift layer contactTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 10, 2017·2 cites·20 claims
- 1574US9202692B2High voltage depletion mode N-channel JFETTEXAS INSTRUMENTS INC·Filed 2014·Granted Dec 1, 2015·2 cites·20 claims
- 1672US8476127B2Integrated lateral high voltage MOSFETDENISON MARIE·Filed 2011·Granted Jul 2, 2013·2 cites·14 claims
- 1772US6624481B1ESD robust bipolar transistor with high variable trigger and sustaining voltagesTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 23, 2003·17 cites·20 claims
- 1871US9397211B2Lateral MOSFET with buried drain extension layerTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 19, 2016·1 cites·9 claims
- 1971US7195965B2Premature breakdown in submicron device geometriesTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 27, 2007·14 cites·4 claims
- 2070US7345343B2Integrated circuit having a top side wafer contact and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 18, 2008·4 cites·9 claims
- 2168US10937905B2Transistor having double isolation with one floating isolationTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 2, 2021·2 cites·20 claims
- 2268US9508869B2High voltage depletion mode N-channel JFETTEXAS INSTRUMENTS INC·Filed 2015·Granted Nov 29, 2016·1 cites·17 claims
- 2368US9087708B2IC with floating buried layer ring for isolation of embedded islandsTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 21, 2015·2 cites·10 claims
- 2467US7989853B2Integration of high voltage JFET in linear bipolar CMOS processTEXAS INSTRUMENTS INC·Filed 2009·Granted Aug 2, 2011·3 cites·18 claims
- 2567US4901120AStructure for fast-recovery bipolar devicesUNITRODE CORP·Filed 1987·Granted Feb 13, 1990·28 cites·9 claims
- 2666US8278683B2Lateral insulated gate bipolar transistorKAWAHARA HIDEAKI·Filed 2009·Granted Oct 2, 2012·3 cites·12 claims
- 2764US7736961B2High voltage depletion FET employing a channel stopping implantTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 15, 2010·3 cites·20 claims
- 2864US7417270B2Distributed high voltage JFETTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 26, 2008·9 cites·26 claims
- 2964US6815276B2Segmented power MOSFET of safe operationTEXAS INSTRUMENTS INC·Filed 2002·Granted Nov 9, 2004·10 cites·9 claims
- 3063US4231059ATechnique for controlling emitter ballast resistanceWESTINGHOUSE ELECTRIC CORP·Filed 1978·Granted Oct 28, 1980·21 cites·16 claims
- 3162US10535731B2Lateral MOSFET with buried drain extension layerTEXAS INSTRUMENTS INC·Filed 2018·Granted Jan 14, 2020·0 cites·18 claims
- 3260US9299832B2High voltage lateral DMOS transistor with optimized source-side blocking capabilityTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 29, 2016·0 cites·10 claims
- 3360US4551353AMethod for reducing leakage currents in semiconductor devicesUNITRODE CORP·Filed 1984·Granted Nov 5, 1985·21 cites·15 claims
- 3459US8872273B2Integrated gate controlled high voltage dividerKAWAHARA HIDEAKI·Filed 2012·Granted Oct 28, 2014·1 cites·21 claims
- 3556US9831320B2High voltage lateral DMOS transistor with optimized source-side blocking capabilityTEXAS INSTRUMENTS INC·Filed 2016·Granted Nov 28, 2017·0 cites·20 claims
- 3656US4042947AHigh voltage transistor with high gainWESTINGHOUSE ELECTRIC CORP·Filed 1976·Granted Aug 16, 1977·11 cites·1 claims
- 3755US9793375B2High voltage lateral DMOS transistor with optimized source-side blocking capabilityTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 17, 2017·0 cites·18 claims
- 3854US10446734B2Vertical thermoelectric structuresTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 15, 2019·0 cites·15 claims
- 3954US10319809B2Structures to avoid floating resurf layer in high voltage lateral devicesTEXAS INSTRUMENTS INC·Filed 2017·Granted Jun 11, 2019·0 cites·19 claims
- 4054US9947784B2High voltage lateral extended drain MOS transistor with improved drift layer contactTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 17, 2018·0 cites·17 claims
- 4154US6878999B2Transistor with improved safe operating areaTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 12, 2005·6 cites·20 claims
- 4253US10601422B2Integrated high-side driver for P-N bimodal power deviceTEXAS INSTRUMENTS INC·Filed 2017·Granted Mar 24, 2020·0 cites·15 claims
- 4352US7910417B2Distributed high voltage JFETTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 22, 2011·0 cites·17 claims
- 4452US5164813ANew diode structureUNITRODE CORP·Filed 1991·Granted Nov 17, 1992·29 cites·23 claims
- 4551US2010264486A1Field plate trench mosfet transistor with graded dielectric liner thicknessTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 4650US7741205B2Integrated circuit having a top side wafer contact and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 22, 2010·0 cites·13 claims
- 4750US7187034B2Distributed power MOSFETTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 6, 2007·3 cites·4 claims
- 4847US9876071B2Structures to avoid floating RESURF layer in high voltage lateral devicesTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 23, 2018·0 cites·11 claims
- 4946US8274131B2Isolation trench with rounded corners for BiCMOS processPENDHARKAR SAMEER P·Filed 2010·Granted Sep 25, 2012·0 cites·12 claims
- 5045US2015118861A1Czochralski substrates having reduced oxygen donorsTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →