Inventor · disambiguated record
Yong Seok Eun
Also filed as: EUN YONG S · EUN YONG SEOK
22 granted patents·7 pending applications·66 citations·filing 2003–2016
93Inventor score
Top patents by PatentIndex Score
29 records- 0187US8309416B2Semiconductor device with buried bit lines interconnected to one-side-contact and fabrication method thereofPARK EUN-SHIL·Filed 2009·Granted Nov 13, 2012·16 cites·19 claims
- 0284US7589012B1Method for fabricating semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 15, 2009·14 cites·7 claims
- 0376US9236263B2Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the sameSK HYNIX INC·Filed 2012·Granted Jan 12, 2016·3 cites·8 claims
- 0476US8513103B2Method for manufacturing vertical transistor having buried junctionPARK EUN SHIL·Filed 2011·Granted Aug 20, 2013·4 cites·29 claims
- 0573US8481431B2Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the sameROUH KYONG BONG·Filed 2011·Granted Jul 9, 2013·4 cites·21 claims
- 0673US8129244B2Method for fabricating semiconductor deviceEUN YONG-SEOK·Filed 2010·Granted Mar 6, 2012·4 cites·15 claims
- 0771US9275904B2Method for fabricating semiconductor deviceWHANG SUNG-JIN·Filed 2009·Granted Mar 1, 2016·3 cites·12 claims
- 0869US9368586B2Transistor with recess gate and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Jun 14, 2016·2 cites·26 claims
- 0968US8049199B2Phase change memory device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Nov 1, 2011·6 cites·3 claims
- 1068US7723189B2Method for manufacturing semiconductor device having recess gateHYNIX SEMICONDUCTOR INC·Filed 2006·Granted May 25, 2010·4 cites·20 claims
- 1167US8431981B2Semiconductor memory device having vertical transistor and buried bit line and method for fabricating the sameKIM BAEK MANN·Filed 2011·Granted Apr 30, 2013·2 cites·10 claims
- 1266US9553159B2Semiconductor devices having polysilicon gate patterns and methods of fabricating the sameSK HYNIX INC·Filed 2015·Granted Jan 24, 2017·1 cites·4 claims
- 1362US7563673B2Method of forming gate structure of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jul 21, 2009·2 cites·8 claims
- 1456US8912064B2Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the sameSK HYNIX INC·Filed 2013·Granted Dec 16, 2014·0 cites·9 claims
- 1556US8859370B2Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the sameSK HYNIX INC·Filed 2013·Granted Oct 14, 2014·0 cites·5 claims
- 1652US7859041B2Gate structure of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Dec 28, 2010·0 cites·6 claims
- 1751US9418891B2Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the sameSK HYNIX INC·Filed 2015·Granted Aug 16, 2016·0 cites·8 claims
- 1848US8481390B2Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the sameEUN YONG SEOK·Filed 2011·Granted Jul 9, 2013·0 cites·8 claims
- 1947US6949480B2Method for depositing silicon nitride layer of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Sep 27, 2005·1 cites·5 claims
- 2046US2016181159A1Method for fabricating semiconductor deviceSK HYNIX INC·Filed 2016·Application pending·0 cites
- 2145US7851298B2Method for fabricating transistor in a semiconductor device utilizing an etch stop layer pattern as a dummy pattern for the gate electrode formationHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Dec 14, 2010·0 cites·8 claims
- 2245US2008160699A1Method for Fabricating Semiconductor Device Having Bulb-Type Recessed ChannelHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2343US2009004816A1Method of forming isolation layer of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2442US2013161767A1Semiconductor devices having polysilicon gate patterns and methods of fabricating the sameROUH KYONG BONG·Filed 2012·Application pending·0 cites
- 2542US2012217619A1Semiconductor device with triangle prism pillar and method for manufacturing the sameKIM MIN-SOO·Filed 2011·Application pending·0 cites
- 2636US8470664B2Methods of fabricating a dual polysilicon gate and methods of fabricating a semiconductor device using the sameROUH KYONG BONG·Filed 2012·Granted Jun 25, 2013·0 cites·20 claims
- 2736US2005085059A1Method for manufacturing word line of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 2835US6974745B2Method of manufacturing semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Dec 13, 2005·0 cites·9 claims
- 2935US2005136575A1Method for forming gate of semiconductor deviceFiled 2004·Application pending·0 cites
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