Inventor · disambiguated record
Radhika Srinivasan
Also filed as: SRINIVASAN RADHIKA
14 granted patents·1 pending application·463 citations·filing 1996–2003
94Inventor score
Top patents by PatentIndex Score
15 records- 0192US5827765ABuried-strap formation in a dram trench capacitorSIEMENS AG·Filed 1996·Granted Oct 27, 1998·81 cites·26 claims
- 0283US6140208AShallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applicationsIBM·Filed 1999·Granted Oct 31, 2000·72 cites·65 claims
- 0382US6130145AInsitu doped metal policideSIEMENS AG·Filed 1998·Granted Oct 10, 2000·50 cites·16 claims
- 0479US5792685AThree-dimensional device layout having a trench capacitorSIEMENS AG·Filed 1996·Granted Aug 11, 1998·39 cites·1 claims
- 0578US5656535AStorage node process for deep trench-based DRAMSIEMENS AG·Filed 1996·Granted Aug 12, 1997·42 cites·20 claims
- 0677US5844266ABuried strap formation in a DRAM trench capacitorSIEMENS AG·Filed 1997·Granted Dec 1, 1998·32 cites·5 claims
- 0775US5893735AThree-dimensional device layout with sub-groundrule featuresSIEMENS AG·Filed 1996·Granted Apr 13, 1999·34 cites·1 claims
- 0871US5923971AReliable low resistance strap for trench storage DRAM cell using selective epitaxyIBM·Filed 1996·Granted Jul 13, 1999·30 cites·11 claims
- 0970US6153474AMethod of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrateIBM·Filed 1998·Granted Nov 28, 2000·28 cites·18 claims
- 1060US6190955B1Fabrication of trench capacitors using disposable hard maskIBM·Filed 1998·Granted Feb 20, 2001·25 cites·19 claims
- 1157US6348394B1Method and device for array threshold voltage control by trapped charge in trench isolationIBM·Filed 2000·Granted Feb 19, 2002·7 cites·21 claims
- 1254US6074903AMethod for forming electrical isolation for semiconductor devicesSIEMENS AG·Filed 1998·Granted Jun 13, 2000·19 cites·11 claims
- 1350US6797582B2Vertical thermal nitride mask (anti-collar) and processing thereofIBM·Filed 2003·Granted Sep 28, 2004·2 cites·10 claims
- 1440US2003107111A1A 3-d microelectronic structure including a vertical thermal nitride maskIBM·Filed 2001·Application pending·0 cites
- 1530US6333531B1Dopant control of semiconductor devicesIBM·Filed 1999·Granted Dec 25, 2001·2 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →