Inventor · disambiguated record
Philip L. Flaitz
Also filed as: FLAITZ PHILIP · FLAITZ PHILIP L · FLAITZ PHILIP LEE
18 granted patents·3 pending applications·708 citations·filing 1985–2009
95Inventor score
Top patents by PatentIndex Score
21 records- 0195US7402532B2Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layerIBM·Filed 2006·Granted Jul 22, 2008·28 cites·1 claims
- 0295US5763315AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Jun 9, 1998·199 cites·9 claims
- 0394US6046487AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Apr 4, 2000·169 cites·4 claims
- 0494US5130067AMethod and means for co-sintering ceramic/metal mlc substratesIBM·Filed 1986·Granted Jul 14, 1992·140 cites·21 claims
- 0587US8324605B2Dielectric mesh isolated phase change structure for phase change memoryLUNG HSIANG-LAN·Filed 2008·Granted Dec 4, 2012·16 cites·21 claims
- 0684US6746933B1Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2001·Granted Jun 8, 2004·35 cites·12 claims
- 0782US7102232B2Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layerIBM·Filed 2004·Granted Sep 5, 2006·19 cites·13 claims
- 0877US7820559B2Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layerIBM·Filed 2008·Granted Oct 26, 2010·4 cites·19 claims
- 0974US7951708B2Copper interconnect structure with amorphous tantalum iridium diffusion barrierIBM·Filed 2009·Granted May 31, 2011·5 cites·13 claims
- 1073US4764341ABonding of pure metal films to ceramicsIBM·Filed 1987·Granted Aug 16, 1988·22 cites·16 claims
- 1168US6410399B1Process to lower strap, wordline and bitline contact resistance in trench-based DRAMS by silicidizationIBM·Filed 2000·Granted Jun 25, 2002·15 cites·17 claims
- 1263US6960514B2Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2004·Granted Nov 1, 2005·9 cites·12 claims
- 1362US6707086B1Method for forming crystalline silicon nitrideINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 16, 2004·7 cites·12 claims
- 1451US4755631AApparatus for providing an electrical connection to a metallic pad situated on a brittle dielectric substrateIBM·Filed 1987·Granted Jul 5, 1988·19 cites·2 claims
- 1543US4672739AMethod for use in brazing an interconnect pin to a metallization pattern situated on a brittle dielectric substrateIBM·Filed 1985·Granted Jun 16, 1987·13 cites·10 claims
- 1638US6740568B2Method to enhance epitaxial regrowth in amorphous silicon contactsINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 25, 2004·0 cites·8 claims
- 1736US2002182893A1Oxidation of silicon nitride films in semiconductor devicesIBM·Filed 2001·Application pending·0 cites
- 1835US2005017282A1Dram buried strap process with silicon carbideIBM·Filed 2003·Application pending·0 cites
- 1934US5167913AMethod of forming an adherent layer of metallurgy on a ceramic substrateIBM·Filed 1991·Granted Dec 1, 1992·6 cites·25 claims
- 2030US6333531B1Dopant control of semiconductor devicesIBM·Filed 1999·Granted Dec 25, 2001·2 cites·25 claims
- 2129US2002137362A1Method for forming crystalline silicon nitrideFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →