Inventor · disambiguated record
James S. Speck
Also filed as: SPECK JAMES · SPECK JAMES S · SPECK JAMES S SPECK S · SPECK JAMES STEPHEN
131 granted patents·65 pending applications·2,704 citations·filing 1995–2021
99Inventor score
Files withUNIV CALIFORNIA99CRAVEN MICHAEL D5SEOUL OPTO DEVICE CO LTD5BAKER TROY J4CHAKRABORTY ARPAN4
Top patents by PatentIndex Score
196 records- 0199US8188687B2Light emitting device for AC power operationLEE CHUNG HOON·Filed 2006·Granted May 29, 2012·91 cites·13 claims
- 0298US7976630B2Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufactureSORAA INC·Filed 2009·Granted Jul 12, 2011·93 cites·20 claims
- 0398US7691658B2Method for improved growth of semipolar (Al,In,Ga,B)NUNIV CALIFORNIA·Filed 2007·Granted Apr 6, 2010·266 cites·26 claims
- 0498US7338828B2Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)UNIV CALIFORNIA·Filed 2006·Granted Mar 4, 2008·324 cites·11 claims
- 0598US7220324B2Technique for the growth of planar semi-polar gallium nitrideUNIV CALIFORNIA·Filed 2006·Granted May 22, 2007·317 cites·18 claims
- 0698US7208393B2Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2005·Granted Apr 24, 2007·104 cites·19 claims
- 0798US7186302B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Mar 6, 2007·87 cites·20 claims
- 0898US6900070B2Dislocation reduction in non-polar gallium nitride thin filmsUNIV CALIFORNIA·Filed 2003·Granted May 31, 2005·135 cites·22 claims
- 0997US8492185B1Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devicesD EVELYN MARK P·Filed 2012·Granted Jul 23, 2013·43 cites·20 claims
- 1097US8465588B2Ammonothermal method for growth of bulk gallium nitridePOBLENZ CHRISTIANE·Filed 2011·Granted Jun 18, 2013·53 cites·45 claims
- 1197US7361576B2Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)UNIV CALIFORNIA·Filed 2006·Granted Apr 22, 2008·121 cites·18 claims
- 1296US9129977B2Method of controlling stress in group-III nitride films deposited on substratesMARCHAND HUGUES·Filed 2011·Granted Sep 8, 2015·28 cites·45 claims
- 1396US7948011B2N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistorUNIV CALIFORNIA·Filed 2006·Granted May 24, 2011·81 cites·37 claims
- 1496US7846757B2Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2006·Granted Dec 7, 2010·33 cites·23 claims
- 1596US7220658B2Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2003·Granted May 22, 2007·105 cites·21 claims
- 1695US7781789B2Transparent mirrorless light emitting diodeUNIV CALIFORNIA·Filed 2007·Granted Aug 24, 2010·28 cites·56 claims
- 1795US7723216B2In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)NUNIV CALIFORNIA·Filed 2007·Granted May 25, 2010·24 cites·27 claims
- 1895US7345298B2Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrateUNIV CALIFORNIA·Filed 2005·Granted Mar 18, 2008·25 cites·35 claims
- 1995US7091514B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesUNIV CALIFORNIA·Filed 2003·Granted Aug 15, 2006·70 cites·9 claims
- 2094US8716946B2Light emitting device for AC power operationLEE CHUNG HOON·Filed 2010·Granted May 6, 2014·11 cites·10 claims
- 2194US8395332B2Light emitting device for AC power operationLEE CHUNG HOON·Filed 2012·Granted Mar 12, 2013·12 cites·12 claims
- 2294US7291864B2Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrateUNIV CALIFORNIA·Filed 2005·Granted Nov 6, 2007·24 cites·33 claims
- 2393US10400352B2Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrateSORAA INC·Filed 2017·Granted Sep 3, 2019·6 cites·18 claims
- 2493US8525230B2Field-effect transistor with compositionally graded nitride layer on a silicaon substrateMARCHAND HUGUES·Filed 2010·Granted Sep 3, 2013·14 cites·15 claims
- 2593US7704331B2Technique for the growth of planar semi-polar gallium nitrideUNIV CALIFORNIA·Filed 2007·Granted Apr 27, 2010·14 cites·30 claims
- 2693US7504274B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionUNIV CALIFORNIA·Filed 2007·Granted Mar 17, 2009·16 cites·12 claims
- 2793US5796771AMiniature self-pumped monolithically integrated solid state laserUNIV CALIFORNIA·Filed 1996·Granted Aug 18, 1998·140 cites·49 claims
- 2892US9611987B2White light source employing a III-nitride based laser diode pumping a phosphorUNIV CALIFORNIA·Filed 2013·Granted Apr 4, 2017·15 cites·22 claims
- 2992US8114698B2High light extraction efficiency nitride based light emitting diode by surface rougheningZHONG HONG·Filed 2008·Granted Feb 14, 2012·17 cites·8 claims
- 3092US7956360B2Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2007·Granted Jun 7, 2011·15 cites·7 claims
- 3191US10985285B2Methods for fabricating III-nitride tunnel junction devicesUNIV CALIFORNIA·Filed 2017·Granted Apr 20, 2021·9 cites·20 claims
- 3291US7955983B2Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)UNIV CALIFORNIA·Filed 2008·Granted Jun 7, 2011·14 cites·8 claims
- 3390US7755096B2Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrateUNIV CALIFORNIA·Filed 2007·Granted Jul 13, 2010·18 cites·17 claims
- 3489US9564320B2Large area nitride crystal and method for making itSORAA INC·Filed 2012·Granted Feb 7, 2017·7 cites·22 claims
- 3589US9136673B2Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laserUNIV CALIFORNIA·Filed 2013·Granted Sep 15, 2015·7 cites·20 claims
- 3689US8188458B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesCRAVEN MICHAEL D·Filed 2011·Granted May 29, 2012·7 cites·21 claims
- 3789US7847293B2Growth of reduced dislocation density non-polar gallium nitrideUNIV CALIFORNIA·Filed 2007·Granted Dec 7, 2010·10 cites·9 claims
- 3888US8860331B2Light emitting device for AC power operationSEOUL VIOSYS CO LTD·Filed 2013·Granted Oct 14, 2014·5 cites·12 claims
- 3988US8481991B2Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocationsOHTA HIROAKI·Filed 2010·Granted Jul 9, 2013·8 cites·27 claims
- 4088US8299452B2Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodesSATO HITOSHI·Filed 2012·Granted Oct 30, 2012·7 cites·21 claims
- 4188US7956371B2High efficiency light emitting diode (LED)UNIV CALIFORNIA·Filed 2006·Granted Jun 7, 2011·17 cites·24 claims
- 4288US7858996B2Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devicesUNIV CALIFORNIA·Filed 2007·Granted Dec 28, 2010·11 cites·43 claims
- 4388US7772601B2Light emitting device having a plurality of light emitting cells and method of fabricating the sameSEOUL OPTO DEVICE CO LTD·Filed 2005·Granted Aug 10, 2010·13 cites·2 claims
- 4487US11158760B2Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devicesUNIV CALIFORNIA·Filed 2019·Granted Oct 26, 2021·3 cites·21 claims
- 4587US9691712B2Method of controlling stress in group-III nitride films deposited on substratesUNIV CALIFORNIA·Filed 2014·Granted Jun 27, 2017·4 cites·32 claims
- 4687US9040326B2High light extraction efficiency nitride based light emitting diode by surface rougheningUNIV CALIFORNIA·Filed 2014·Granted May 26, 2015·5 cites·20 claims
- 4787US8158497B2Planar nonpolar m-plane group III nitride films grown on miscut substratesHIRAI ASAKO·Filed 2008·Granted Apr 17, 2012·9 cites·20 claims
- 4886US11532922B2III-nitride surface-emitting laser and method of fabricationUNIV CALIFORNIA·Filed 2018·Granted Dec 20, 2022·5 cites·21 claims
- 4986US8761218B2Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodesLIN YOU-DA·Filed 2011·Granted Jun 24, 2014·11 cites·28 claims
- 5086US8368179B2Miscut semipolar optoelectronic deviceUNIV CALIFORNIA·Filed 2011·Granted Feb 5, 2013·5 cites·39 claims
Showing the top 50 of 196 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →