Inventor · disambiguated record
Masahiro Orita
Also filed as: ORITA MASAHIRO
13 granted patents·3 pending applications·8,912 citations·filing 1995–2020
94Inventor score
Files withHOYA CORP8JAPAN SCIENCE & TECH AGENCY3FUJIFILM CORP2JAPAN SCIENCE & TECH CORP1KAWAZOE HIROSHI1
Top patents by PatentIndex Score
16 records- 0198US7323356B2LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin filmJAPAN SCIENCE & TECH AGENCY·Filed 2003·Granted Jan 29, 2008·4.2k cites·10 claims
- 0298US7061014B2Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin filmJAPAN SCIENCE & TECH AGENCY·Filed 2002·Granted Jun 13, 2006·4.4k cites·12 claims
- 0394US7880377B2Quantum dot-dispersed light emitting device, and manufacturing method thereofHOYA CORP·Filed 2005·Granted Feb 1, 2011·62 cites·13 claims
- 0492US6821655B1Low-resistance ITO thin film and method for manufacturing such a filmHOYA CORP·Filed 2000·Granted Nov 23, 2004·43 cites·13 claims
- 0592US5622653AElectro-conductive oxides and electrodes using the sameHOYA CORP·Filed 1995·Granted Apr 22, 1997·70 cites·13 claims
- 0685US5681671AElectro-conductive oxides and electrodes using the sameHOYA CORP·Filed 1996·Granted Oct 28, 1997·44 cites·24 claims
- 0784US5955178AElectro-conductive oxides and electrodes using the sameHOYA CORP·Filed 1997·Granted Sep 21, 1999·50 cites·4 claims
- 0882US5843341AElectro-conductive oxide electrodes and devices using the sameHOYA CORP·Filed 1997·Granted Dec 1, 1998·57 cites·15 claims
- 0976US6806503B2Light-emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laserJAPAN SCIENCE & TECH AGENCY·Filed 2001·Granted Oct 19, 2004·16 cites·8 claims
- 1061US2020407859A1Photocatalyst for water splitting, electrode, and water splitting deviceFUJIFILM CORP·Filed 2020·Application pending·0 cites
- 1160US6897560B2Ultraviolet-transparent conductive film and process for producing the sameJAPAN SCIENCE & TECH CORP·Filed 2001·Granted May 24, 2005·9 cites·11 claims
- 1253US2020385873A1Photocatalytic electrode for water splitting and water splitting deviceFUJIFILM CORP·Filed 2020·Application pending·0 cites
- 1347US7612432B2P-type ZnS based semiconductor material having a low resistance due to its high copper contentHOYA CORP·Filed 2005·Granted Nov 3, 2009·0 cites·28 claims
- 1441US8212260B2P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor materialORITA MASAHIRO·Filed 2007·Granted Jul 3, 2012·0 cites·8 claims
- 1538US7355213B2Electrode material and semiconductor elementHOYA CORP·Filed 2004·Granted Apr 8, 2008·0 cites·11 claims
- 1638US2006261350A1Light-emitting diodeKAWAZOE HIROSHI·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →