Inventor · disambiguated record
Tangali S. Sudarshan
Also filed as: SUDARSHAN TANGALI · SUDARSHAN TANGALI S
18 granted patents·2 pending applications·89 citations·filing 1983–2018
93Inventor score
Top patents by PatentIndex Score
20 records- 0195US8820308B2Methods, wires, and apparatus for slicing hard materialsUNIV SOUTH CAROLINA·Filed 2012·Granted Sep 2, 2014·10 cites·12 claims
- 0293US8291895B2Methods, wires, and apparatus for slicing hard materialsSUDARSHAN TANGALI·Filed 2008·Granted Oct 23, 2012·23 cites·13 claims
- 0386US8900979B2Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial filmsUNIV SOUTH CAROLINA·Filed 2012·Granted Dec 2, 2014·6 cites·19 claims
- 0483US8637386B2Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating sameZHANG QINGCHUN·Filed 2010·Granted Jan 28, 2014·5 cites·19 claims
- 0581US8820309B2Methods, wires, and apparatus for slicing hard materialsUNIV SOUTH CAROLINA·Filed 2012·Granted Sep 2, 2014·1 cites·24 claims
- 0680US9782846B2Methods, wires, and apparatus for slicing hard materialsSUDARSHAN TANGALI·Filed 2014·Granted Oct 10, 2017·1 cites·26 claims
- 0778US9644288B2Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial filmsUNIV SOUTH CAROLINA·Filed 2014·Granted May 9, 2017·4 cites·22 claims
- 0878US9570560B2Diffused junction termination structures for silicon carbide devicesCREE INC·Filed 2013·Granted Feb 14, 2017·3 cites·15 claims
- 0977US9966491B2Optically switched graphene/4H-SiC junction bipolar transistorUNIV SOUTH CAROLINA·Filed 2016·Granted May 8, 2018·4 cites·25 claims
- 1075US7220978B2System and method for detecting defects in semiconductor wafersUNIV SOUTH CAROLINA·Filed 2003·Granted May 22, 2007·16 cites·33 claims
- 1174US9644287B2Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial filmsUNIV SOUTH CAROLINA·Filed 2014·Granted May 9, 2017·2 cites·22 claims
- 1257US10260166B2Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic depositionUNIV SOUTH CAROLINA·Filed 2017·Granted Apr 16, 2019·0 cites·20 claims
- 1355US9842898B2Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetimeSUDARSHAN TANGALI S·Filed 2013·Granted Dec 12, 2017·1 cites·6 claims
- 1453US9885124B2Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic depositionUNIV SOUTH CAROLINA·Filed 2012·Granted Feb 6, 2018·0 cites·23 claims
- 1553US4780176AMethod of wetting metalsUNIV SOUTH CAROLINA·Filed 1983·Granted Oct 25, 1988·12 cites·7 claims
- 1649US11680333B2Defect engineered high quality multilayer epitaxial graphene growth with thickness controllabilityUNIV SOUTH CAROLINA·Filed 2014·Granted Jun 20, 2023·0 cites·12 claims
- 1747US7061021B2System and method for fabricating diodesUNIV SOUTH CAROLINA·Filed 2004·Granted Jun 13, 2006·1 cites·14 claims
- 1838US8574528B2Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetimeSUDARSHAN TANGALI S·Filed 2010·Granted Nov 5, 2013·0 cites·15 claims
- 1935US2010276699A1Silicon Carbide and Related Wide Bandgap Semiconductor Based Optically-Controlled Power Switching DevicesUNIV SOUTH CAROLINA·Filed 2010·Application pending·0 cites
- 2035US2020056302A1Elimination of Basal Plane Dislocation and Pinning the Conversion Point Below the Epilayer Interface for SiC Power Device ApplicationsUNIV SOUTH CAROLINA·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →