Inventor · disambiguated record
Seungmoo Choi
Also filed as: CHOI SEUNGMOO
24 granted patents·2 pending applications·511 citations·filing 1998–2016
96Inventor score
Files withAGERE SYST GUARDIAN CORP7AGERE SYSTEMS INC7LUCENT TECHNOLOGIES INC4CYPRESS SEMICONDUCTOR CORP3BUYNOSKI MATTHEW1
Top patents by PatentIndex Score
26 records- 0193US6320244B1Integrated circuit device having dual damascene capacitorAGERE SYST GUARDIAN CORP·Filed 1999·Granted Nov 20, 2001·152 cites·21 claims
- 0288US6274409B1Method for making a semiconductor deviceAGERE SYST GUARDIAN CORP·Filed 2000·Granted Aug 14, 2001·57 cites·33 claims
- 0385US6503787B1Device and method for forming semiconductor interconnections in an integrated circuit substrateAGERE SYSTEMS INC·Filed 2000·Granted Jan 7, 2003·34 cites·8 claims
- 0484US6340827B1Diffusion barrier for use with high dielectric constant materials and electronic devices incorporating sameAGERE SYST GUARDIAN CORP·Filed 2000·Granted Jan 22, 2002·30 cites·51 claims
- 0581US6603168B1Vertical DRAM device with channel access transistor and stacked storage capacitor and associated methodAGERE SYSTEMS INC·Filed 2000·Granted Aug 5, 2003·29 cites·25 claims
- 0680US7563669B2Integrated circuit with a trench capacitor structure and method of manufactureAGERE SYSTEMS INC·Filed 2006·Granted Jul 21, 2009·9 cites·7 claims
- 0780US6215158B1Device and method for forming semiconductor interconnections in an integrated circuit substrateLUCENT TECHNOLOGIES INC·Filed 1998·Granted Apr 10, 2001·50 cites·12 claims
- 0880US6168991B1DRAM capacitor including Cu plug and Ta barrier and method of formingLUCENT TECHNOLOGIES INC·Filed 1999·Granted Jan 2, 2001·57 cites·12 claims
- 0978US6072210AIntegrate DRAM cell having a DRAM capacitor and a transistorLUCENT TECHNOLOGIES INC·Filed 1998·Granted Jun 6, 2000·35 cites·6 claims
- 1072US6468899B1Contactless local interconnect process utilizing self-aligned silicideAGERE SYST GUARDIAN CORP·Filed 2001·Granted Oct 22, 2002·18 cites·21 claims
- 1171US6362054B1Method for fabricating MOS device with halo implanted regionAGERE SYST GUARDIAN CORP·Filed 2000·Granted Mar 26, 2002·14 cites·15 claims
- 1264US7989328B2Resistive memory array using P-I-N diode select device and methods of fabrication thereofSPANSION LLC·Filed 2006·Granted Aug 2, 2011·1 cites·24 claims
- 1357US10147877B2Method of forming controllably conductive oxideCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 4, 2018·0 cites·5 claims
- 1457US9837469B1Resistive memory array using P-I-N diode select device and methods of fabrication thereofCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 5, 2017·0 cites·5 claims
- 1553US9461247B2Method of forming controllably conductive oxideCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Oct 4, 2016·0 cites·20 claims
- 1653US6762459B2Method for fabricating MOS device with halo implanted regionAGERE SYSTEMS INC·Filed 2001·Granted Jul 13, 2004·4 cites·15 claims
- 1749US6893806B2Multiple purpose reticle layout for selective printing of test circuitsAGERE SYSTEMS INC·Filed 2002·Granted May 17, 2005·3 cites·2 claims
- 1848US8946020B2Method of forming controllably conductive oxideBUYNOSKI MATTHEW·Filed 2007·Granted Feb 3, 2015·0 cites·16 claims
- 1948US6376302B1Method for forming a DRAM capacitor having a high dielectric constant dielectric and capacitor made therebyAGERE SYST GUARDIAN CORP·Filed 2000·Granted Apr 23, 2002·3 cites·6 claims
- 2046US9490126B2Resistive memory array using P-I-N diode select device and methods of fabrication thereofCHOI SEUNGMOO·Filed 2011·Granted Nov 8, 2016·0 cites·12 claims
- 2143US2007099372A1Device having active regions of different depthsCHITTIPEDDI SAILESH·Filed 2006·Application pending·0 cites
- 2242US6191001B1Shallow trench isolation methodLUCENT TECHNOLOGIES INC·Filed 1999·Granted Feb 20, 2001·11 cites·25 claims
- 2337US2002019096A1Silicon on insulator transistor structure for imbedded DRAMFiled 2001·Application pending·0 cites
- 2432US6890827B1Method of fabricating a silicon on insulator transistor structure for imbedded DRAMAGERE SYSTEMS INC·Filed 1999·Granted May 10, 2005·1 cites·6 claims
- 2531US6483144B2Semiconductor device having self-aligned contact and landing pad structure and method of forming sameAGERE SYST GUARDIAN CORP·Filed 1999·Granted Nov 19, 2002·1 cites·8 claims
- 2629US6586310B1High resistivity film for 4T SRAMAGERE SYSTEMS INC·Filed 1999·Granted Jul 1, 2003·2 cites·9 claims
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