Inventor · disambiguated record
Ruey-Yun Shiue
Also filed as: SHIUE RUEY-YUN
13 granted patents·485 citations·filing 1996–2014
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG13
Top patents by PatentIndex Score
13 records- 0193US9209048B2Two step molding grinding for packaging applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·19 cites·20 claims
- 0290US5700735AMethod of forming bond pad structure for the via plug processTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Dec 23, 1997·126 cites·9 claims
- 0387US5923088ABond pad structure for the via plug processTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jul 13, 1999·96 cites·9 claims
- 0483US7323784B2Top via pattern for bond pad structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 29, 2008·14 cites·12 claims
- 0582US5946567AMethod for making metal capacitors for deep submicrometer processes for semiconductor integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 31, 1999·49 cites·23 claims
- 0679US6451679B1Ion mixing between two-step titanium deposition process for titanium salicide CMOS technologyTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 17, 2002·32 cites·34 claims
- 0775US6140693AMethod for making metal capacitors for deep submicrometer processes for semiconductor integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 31, 2000·34 cites·7 claims
- 0870US5781445APlasma damage monitorTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jul 14, 1998·40 cites·22 claims
- 0967US6211069B1Dual damascene process flow for a deep sub-micron technologyTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 3, 2001·37 cites·12 claims
- 1065US5953601AESD implantation scheme for 0.35 μm 3.3V 70A gate oxide processTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 14, 1999·25 cites·9 claims
- 1163US6875682B1Mesh pad structure to eliminate IMD crack on padTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 5, 2005·10 cites·26 claims
- 1257US7759797B2Bonding pad structure to minimize IMD crackingTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 20, 2010·1 cites·18 claims
- 1346US7135395B2Bonding pad structure to minimize IMD crackingTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 14, 2006·2 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →