Inventor · disambiguated record
Shi-Qing Wang
Also filed as: WANG SHI-QING
9 granted patents·3 pending applications·340 citations·filing 1992–2020
90Inventor score
Top patents by PatentIndex Score
12 records- 0193US6287955B1Integrated circuits with multiple low dielectric-constant inter-metal dielectricsALLIED SIGNAL INC·Filed 2000·Granted Sep 11, 2001·77 cites·8 claims
- 0292US6080526AIntegration of low-k polymers into interlevel dielectrics using controlled electron-beam radiationALLIED SIGNAL INC·Filed 1998·Granted Jun 27, 2000·154 cites·24 claims
- 0376US7526946B2Constant-force rheometerUNIV AKRON·Filed 2006·Granted May 5, 2009·5 cites·10 claims
- 0476US5337279AScreening processes for ferroelectric memory devicesNAT SEMICONDUCTOR CORP·Filed 1992·Granted Aug 9, 1994·42 cites·25 claims
- 0575US6589862B2Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devicesALLIED SIGNAL INC·Filed 2002·Granted Jul 8, 2003·18 cites·26 claims
- 0672US7942036B2Rheometer allowing direct visualization of continuous simple shear in non-newtonian fluidUNIV AKRON·Filed 2007·Granted May 17, 2011·3 cites·57 claims
- 0767US6509259B1Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devicesALLIED SIGNAL INC·Filed 1999·Granted Jan 21, 2003·31 cites·6 claims
- 0848US2021155796A1Poly(lactic acid)-based materials by method utilizing melt stretching and cold crystallizationWang shi qing·Filed 2020·Application pending·0 cites
- 0945US6770975B2Integrated circuits with multiple low dielectric-constant inter-metal dielectricsALLIED SIGNAL INC·Filed 1999·Granted Aug 3, 2004·10 cites·9 claims
- 1044US7908905B2Rheometer allowing direct visualization of continuous simple shear in non-newtonian fluidUNIV AKRON·Filed 2006·Granted Mar 22, 2011·0 cites·2 claims
- 1140US2004207091A1Integrated circuits with multiple low dielectric-constant inter-metal dielectricsWANG SHI-QING·Filed 2004·Application pending·0 cites
- 1233US2011263079A1Interface protection layaer used in a thin film transistor structureAPPLIES MATERIALS INC·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →