Inventor · disambiguated record
Issei Satoh
Also filed as: SATOH ISSEI
20 granted patents·13 pending applications·21 citations·filing 2008–2022
90Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES18SATOH ISSEI8FUJIWARA SHINSUKE2ISHIHARA CHEMICAL CO LTD2SEKI YUKI2
Top patents by PatentIndex Score
33 records- 0184US8697564B2Method of manufacturing GaN-based filmFUJIWARA SHINSUKE·Filed 2011·Granted Apr 15, 2014·2 cites·4 claims
- 0283US7995267B2Wavelength converter manufacturing method and wavelength converterSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Aug 9, 2011·7 cites·7 claims
- 0374US8367577B2Thin film of aluminum nitride and process for producing the thin film of aluminum nitrideSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Feb 5, 2013·1 cites·5 claims
- 0466US8697550B2Method of manufacturing GaN-based filmSATOH ISSEI·Filed 2011·Granted Apr 15, 2014·2 cites·7 claims
- 0566US8259386B2Wavelength conversion element and method for manufacturing wavelength conversion elementSATOH ISSEI·Filed 2009·Granted Sep 4, 2012·2 cites·6 claims
- 0665US12258677B2Synthetic single crystal diamond, tool including the same and method of producing synthetic single crystal diamondSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Mar 25, 2025·0 cites·9 claims
- 0765US11891720B2Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Feb 6, 2024·0 cites·11 claims
- 0865US8497185B2Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that methodSEKI YUKI·Filed 2011·Granted Jul 30, 2013·2 cites·12 claims
- 0964US9184228B2Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layerSEKI YUKI·Filed 2011·Granted Nov 10, 2015·2 cites·7 claims
- 1061US8715414B2Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial waferSATOH ISSEI·Filed 2009·Granted May 6, 2014·1 cites·9 claims
- 1158US8357597B2Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 22, 2013·0 cites·3 claims
- 1257US8293011B2Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystalMIYANAGA MICHIMASA·Filed 2008·Granted Oct 23, 2012·2 cites·5 claims
- 1354US8540817B2Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial waferSATOH ISSEI·Filed 2009·Granted Sep 24, 2013·0 cites·4 claims
- 1453US8937339B2Si(1-V-W-X)CWAlXNV substrate, and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Jan 20, 2015·0 cites·2 claims
- 1553US8748890B2Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Jun 10, 2014·0 cites·5 claims
- 1653US2011110840A1Method for producing group iii-nitride crystal and group iii-nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 1752US10329644B2Ta—Nb alloy powder and anode element for solid electrolytic capacitorISHIHARA CHEMICAL CO LTD·Filed 2014·Granted Jun 25, 2019·0 cites·17 claims
- 1852US8962365B2Method of manufacturing GaN-based film and composite substrate used thereforSATOH ISSEI·Filed 2011·Granted Feb 24, 2015·0 cites·6 claims
- 1952US2011042684A1Method of Growing AlN Crystals, and AlN LaminateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2052US2024387640A1SiC CRYSTAL SUBSTRATE, METHOD OF MANUFACTURING SiC CRYSTAL SUBSTRATE, SiC EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SiC EPITAXIAL SUBSTRATESUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 2151US8363326B2AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lensSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 29, 2013·0 cites·9 claims
- 2249US8591653B2Compound semiconductor single-crystal manufacturing device and manufacturing methodSATOH ISSEI·Filed 2009·Granted Nov 26, 2013·0 cites·11 claims
- 2349US2011076453A1AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission BodySUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2448US2011114016A1AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFACTURING METHODSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2547US2010242833A1AlN Crystal and Method of Its GrowthSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 2646US2011104438A1AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENTSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2745US2015118830A1Method of Manufacturing GaN-Based Film and Composite Substrate Used ThereforSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 2840US2016104580A1Ta powder, production method therefor, and ta granulated powderISHIHARA CHEMICAL CO LTD·Filed 2013·Application pending·0 cites
- 2939US2012118222A1METHOD OF MANUFACTURING GaN-BASED FILMFUJIWARA SHINSUKE·Filed 2011·Application pending·0 cites
- 3039US2013168693A1Protective-film-attached composite substrate and method of manufacturing semiconductor deviceSATOH ISSEI·Filed 2012·Application pending·0 cites
- 3139US2013032928A1Group iii nitride composite substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 3237US8613802B2Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystalSATOH ISSEI·Filed 2010·Granted Dec 24, 2013·0 cites·3 claims
- 3336US2011265709A1Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing ApparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →