Inventor · disambiguated record
Hari Venugopalan
Also filed as: VENUGOPALAN HARI · VENUGOPALAN HARI S
18 granted patents·6 pending applications·979 citations·filing 2001–2007
96Inventor score
Top patents by PatentIndex Score
24 records- 0197US7125734B2Increased light extraction from a nitride LEDGELCORE LLC·Filed 2005·Granted Oct 24, 2006·67 cites·14 claims
- 0296US7285801B2LED with series-connected monolithically integrated mesasLUMINATION LLC·Filed 2004·Granted Oct 23, 2007·227 cites·23 claims
- 0395US6746889B1Optoelectronic device with improved light extractionEMCORE CORP·Filed 2002·Granted Jun 8, 2004·181 cites·43 claims
- 0494US7179670B2Flip-chip light emitting diode device without sub-mountGELCORE LLC·Filed 2004·Granted Feb 20, 2007·84 cites·32 claims
- 0590US7843074B2Underfill for light emitting deviceLUMINATION LLC·Filed 2006·Granted Nov 30, 2010·22 cites·10 claims
- 0690US6958498B2Optimized contact design for flip-chip LEDEMCORE CORP·Filed 2002·Granted Oct 25, 2005·88 cites·37 claims
- 0789US7385229B2Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contactLUMINATION LLC·Filed 2006·Granted Jun 10, 2008·16 cites·11 claims
- 0888US6787435B2GaN LED with solderable backside metalGELCORE LLC·Filed 2002·Granted Sep 7, 2004·57 cites·19 claims
- 0984US7064356B2Flip chip light emitting diode with micromesas and a conductive meshGELCORE LLC·Filed 2004·Granted Jun 20, 2006·46 cites·23 claims
- 1084US7023022B2Microelectronic package having improved light extractionEMCORE CORP·Filed 2001·Granted Apr 4, 2006·37 cites·17 claims
- 1182US7015516B2Led packages having improved light extractionGELCORE LLC·Filed 2001·Granted Mar 21, 2006·38 cites·20 claims
- 1276US6903379B2GaN based LED lighting extraction efficiency using digital diffractive phase gratingGELCORE LLC·Filed 2002·Granted Jun 7, 2005·30 cites·18 claims
- 1375US7358539B2Flip-chip light emitting diode with indium-tin-oxide based reflecting contactsLUMINATION LLC·Filed 2003·Granted Apr 15, 2008·21 cites·22 claims
- 1473US7190005B2GaN LED with solderable backside metalGELCORE LLC·Filed 2004·Granted Mar 13, 2007·19 cites·14 claims
- 1568US7141828B2Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contactGELCORE LLC·Filed 2003·Granted Nov 28, 2006·13 cites·5 claims
- 1667US7022550B2Methods for forming aluminum-containing p-contacts for group III-nitride light emitting diodesGELCORE LLC·Filed 2004·Granted Apr 4, 2006·11 cites·14 claims
- 1767US6653215B1Contact to n-GaN with Au terminationEMCORE CORP·Filed 2001·Granted Nov 25, 2003·19 cites·17 claims
- 1849US7667236B2Optimized contact design for thermosonic bonding of flip-chip devicesLUMINATION LLC·Filed 2004·Granted Feb 23, 2010·3 cites·13 claims
- 1948US2007114557A1Flip-chip light emitting diode device without sub-mountGELCORE LLC·Filed 2007·Application pending·0 cites
- 2047US2006186552A1High reflectivity p-contacts for group lll-nitride light emitting diodesGELCORE LLC·Filed 2006·Application pending·0 cites
- 2143US2010181584A1Laser lift-off with improved light extractionGAO XIANG·Filed 2006·Application pending·0 cites
- 2243US2008121902A1Small footprint high power light emitting package with plurality of light emitting diode chipsGELCORE LLC·Filed 2006·Application pending·0 cites
- 2342US2007096120A1Lateral current GaN flip chip LED with shaped transparent substrateGELCORE LLC·Filed 2005·Application pending·0 cites
- 2440US2005263854A1Thick laser-scribed GaN-on-sapphire optoelectronic devicesSHELTON BRYAN S·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →