Inventor · disambiguated record
Mauro Sali
Also filed as: SALI MAURO · SALI MAURO L · SALI MAURO LUIGI
33 granted patents·1 pending application·633 citations·filing 1994–2022
97Inventor score
Files withST MICROELECTRONICS SRL16SGS THOMSON MICROELECTRONICS11MICRON TECHNOLOGY INC6MASTROIANNI FRANCESCO1
Top patents by PatentIndex Score
34 records- 0192US6442068B1Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alterationST MICROELECTRONICS SRL·Filed 2000·Granted Aug 27, 2002·68 cites·29 claims
- 0291US5784314AMethod for setting the threshold voltage of a reference memory cellSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Jul 21, 1998·94 cites·11 claims
- 0388US6385107B1Architecture for handling internal voltages in a non-volatile memory, particularly in a single-voltage supply type of dual-work flash memoryST MICROELECTRONICS SRL·Filed 2000·Granted May 7, 2002·49 cites·10 claims
- 0484US11238940B1Initialization techniques for memory devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 1, 2022·2 cites·35 claims
- 0582US6912598B1Non-volatile memory with functional capability of simultaneous modification of the content and burst mode read or page mode readST MICROELECTRONICS SRL·Filed 2000·Granted Jun 28, 2005·35 cites·15 claims
- 0681US10901622B2Adjustable NAND write performanceMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 26, 2021·5 cites·24 claims
- 0781US6480436B2Non-volatile memory with a charge pump with regulated voltageST MICROELECTRONICS SRL·Filed 2001·Granted Nov 12, 2002·30 cites·31 claims
- 0880US5638327AFlash-EEPROM memory array and method for biasing the sameST MICROELECTRONICS SRL·Filed 1995·Granted Jun 10, 1997·49 cites·23 claims
- 0978US5999456AFlash EEPROM with controlled discharge time of the word lines and source potentials after eraseST MICROELECTRONICS SRL·Filed 1997·Granted Dec 7, 1999·35 cites·13 claims
- 1077US6137725ARow decoding circuit for a semiconductor non-volatile electrically programmable memory and corresponding methodSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Oct 24, 2000·33 cites·9 claims
- 1174US6950337B2Nonvolatile memory device with simultaneous read/writeST MICROELECTRONICS SRL·Filed 2003·Granted Sep 27, 2005·22 cites·14 claims
- 1269US5612641ACircuit for covering initial conditions when starting-up an integrated circuit deviceST MICROELECTRONICS SRL·Filed 1995·Granted Mar 18, 1997·26 cites·9 claims
- 1366US5719807AFlash EEPROM with controlled discharge time of the word lines and source potentials after eraseSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Feb 17, 1998·21 cites·20 claims
- 1465US6401164B1Sectored semiconductor memory device with configurable memory sector addressesST MICROELECTRONICS SRL·Filed 1998·Granted Jun 4, 2002·26 cites·15 claims
- 1564US11211136B2Memory system tester using test pad real time monitoringMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 28, 2021·2 cites·27 claims
- 1663US11657878B2Initialization techniques for memory devicesMICRON TECHNOLOGY INC·Filed 2022·Granted May 23, 2023·0 cites·20 claims
- 1763US11526277B2Adjustable NAND write performanceMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 13, 2022·0 cites·24 claims
- 1863US6349059B1Method for reading data from a non-volatile memory device with autodetect burst mode reading and corresponding reading circuitST MICROELECTRONICS SRL·Filed 2000·Granted Feb 19, 2002·13 cites·30 claims
- 1963US5848013ARow decoding circuit for semiconductor non-volatile electrically programmable memory and corresponding methodSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Dec 8, 1998·19 cites·10 claims
- 2060US6320792B1Row decoding circuit for a semiconductor non-volatile electrically programmable memory and corresponding methodSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Nov 20, 2001·9 cites·21 claims
- 2159US5781474AParallel programming method of memory words and corresponding circuitSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Jul 14, 1998·19 cites·20 claims
- 2257US5926059AStacked Charge pump circuitSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Jul 20, 1999·20 cites·17 claims
- 2356US11763908B2Memory system tester using test pad real time monitoringMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 2455US6854040B1Non-volatile memory device with burst mode reading and corresponding reading methodST MICROELECTRONICS SRL·Filed 2000·Granted Feb 8, 2005·9 cites·36 claims
- 2554US5659502ANegative word line voltage regulation circuit for electrically erasable semiconductor memory devicesSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Aug 19, 1997·13 cites·20 claims
- 2653US5920505ANegative word line voltage regulation circuit for electrically erasable semiconductor memory devicesST MICROELECTRONICS SRL·Filed 1997·Granted Jul 6, 1999·12 cites·12 claims
- 2744US6339551B1Semiconductor device with selectable padsST MICROELECTRONICS SRL·Filed 2000·Granted Jan 15, 2002·4 cites·11 claims
- 2841US5563816AHigh-resolution digital filterST MICROELECTRONICS SRL·Filed 1995·Granted Oct 8, 1996·7 cites·12 claims
- 2938US5994948ACMOS twin-tub negative voltage switching architectureSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Nov 30, 1999·6 cites·23 claims
- 3037US6903995B2Test structure for the measurement of contact to gate distance in non-volatile memory devices and corresponding test methodST MICROELECTRONICS SRL·Filed 2003·Granted Jun 7, 2005·1 cites·18 claims
- 3134US7761675B2Flash memory device with improved management of protection informationMASTROIANNI FRANCESCO·Filed 2006·Granted Jul 20, 2010·0 cites·19 claims
- 3232US5544085AFast adder chainSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Aug 6, 1996·4 cites·20 claims
- 3329US5724290AMethod and programming device for detecting an error in a memorySGS THOMSON MICROELECTRONICS·Filed 1996·Granted Mar 3, 1998·0 cites·13 claims
- 3429US2002136069A1Method and device for reducing average access time of a non-volatile memory during readingST MICROELECTRONICS SRL·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →