Inventor · disambiguated record
Johnathan E. Faltermeier
Also filed as: FALTERMEIER JOHNATHAN · FALTERMEIER JOHNATHAN E
65 granted patents·12 pending applications·1,094 citations·filing 1998–2017
99Inventor score
Top patents by PatentIndex Score
77 records- 0199US7993999B2High-K/metal gate CMOS finFET with improved pFET threshold voltageIBM·Filed 2009·Granted Aug 9, 2011·111 cites·23 claims
- 0298US7118986B2STI formation in semiconductor device including SOI and bulk silicon regionsIBM·Filed 2004·Granted Oct 10, 2006·258 cites·26 claims
- 0397US9865703B2High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) processIBM·Filed 2015·Granted Jan 9, 2018·19 cites·7 claims
- 0496US8716797B2FinFET spacer formation by oriented implantationBASKER VEERARAGHAVAN S·Filed 2009·Granted May 6, 2014·29 cites·15 claims
- 0596US8420464B2Spacer as hard mask scheme for in-situ doping in CMOS finFETsBASKER VEERARAGHAVAN S·Filed 2011·Granted Apr 16, 2013·33 cites·7 claims
- 0695US7951657B2Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (S0I) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistorIBM·Filed 2009·Granted May 31, 2011·35 cites·13 claims
- 0794US9559009B2Gate structure cut after formation of epitaxial active regionsIBM·Filed 2015·Granted Jan 31, 2017·8 cites·10 claims
- 0894US8928057B2Uniform finFET gate heightIBM·Filed 2012·Granted Jan 6, 2015·20 cites·7 claims
- 0994US8901664B2High-K/metal gate CMOS finFET with improved pFET threshold voltageBASKER VEERARAGHAVAN S·Filed 2011·Granted Dec 2, 2014·17 cites·12 claims
- 1093US9337315B2FinFET spacer formation by oriented implantationGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·11 cites·9 claims
- 1193US6268299B1Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeabilityIBM·Filed 2000·Granted Jul 31, 2001·78 cites·19 claims
- 1291US9105559B2Conformal doping for FinFET devicesIBM·Filed 2013·Granted Aug 11, 2015·13 cites·6 claims
- 1390US9318578B2FinFET spacer formation by oriented implantationGLOBALFOUNDRIES INC·Filed 2012·Granted Apr 19, 2016·7 cites·13 claims
- 1490US9240447B1finFETs containing improved strain benefit and self aligned trench isolation structuresIBM·Filed 2014·Granted Jan 19, 2016·9 cites·20 claims
- 1589US8525186B2Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistorCHENG KANGGUO·Filed 2011·Granted Sep 3, 2013·9 cites·20 claims
- 1689US6518641B2Deep slit isolation with controlled voidIBM·Filed 2001·Granted Feb 11, 2003·52 cites·19 claims
- 1788US8367544B2Self-aligned patterned etch stop layers for semiconductor devicesIBM·Filed 2009·Granted Feb 5, 2013·16 cites·11 claims
- 1887US9412596B1Nitridation on HDP oxide before high-k deposition to prevent oxygen ingressIBM·Filed 2015·Granted Aug 9, 2016·4 cites·10 claims
- 1987US6555430B1Process flow for capacitance enhancement in a DRAM trenchIBM·Filed 2000·Granted Apr 29, 2003·44 cites·16 claims
- 2085US8268729B2Smooth and vertical semiconductor fin structureCHENG KANGGUO·Filed 2008·Granted Sep 18, 2012·9 cites·16 claims
- 2184US9537011B1Partially dielectric isolated fin-shaped field effect transistor (FinFET)IBM·Filed 2015·Granted Jan 3, 2017·3 cites·14 claims
- 2284US6746933B1Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2001·Granted Jun 8, 2004·35 cites·12 claims
- 2383US7923815B2DRAM having deep trench capacitors with lightly doped buried platesIBM·Filed 2008·Granted Apr 12, 2011·10 cites·11 claims
- 2483US7749835B2Trench memory with self-aligned strap formed by self-limiting processIBM·Filed 2008·Granted Jul 6, 2010·7 cites·8 claims
- 2583US7705386B2Providing isolation for wordline passing over deep trench capacitorIBM·Filed 2008·Granted Apr 27, 2010·7 cites·20 claims
- 2682US6444516B1Semi-insulating diffusion barrier for low-resistivity gate conductorsIBM·Filed 2000·Granted Sep 3, 2002·31 cites·20 claims
- 2782US6130145AInsitu doped metal policideSIEMENS AG·Filed 1998·Granted Oct 10, 2000·50 cites·16 claims
- 2880US7193262B2Low-cost deep trench decoupling capacitor device and process of manufactureIBM·Filed 2004·Granted Mar 20, 2007·26 cites·16 claims
- 2979US7932136B2Source/drain junction for high performance MOSFET formed by selective EPI processIBM·Filed 2008·Granted Apr 26, 2011·8 cites·7 claims
- 3076US9633906B2Gate structure cut after formation of epitaxial active regionsIBM·Filed 2014·Granted Apr 25, 2017·2 cites·10 claims
- 3176US8933515B2Device structure, layout and fabrication method for uniaxially strained transistorsBEDELL STEPHEN W·Filed 2012·Granted Jan 13, 2015·3 cites·16 claims
- 3274US8492817B2Highly scalable trench capacitorCHENG KANGGUO·Filed 2010·Granted Jul 23, 2013·4 cites·15 claims
- 3374US7888252B2Self-aligned contactIBM·Filed 2009·Granted Feb 15, 2011·4 cites·18 claims
- 3473US9312136B2Replacement metal gate stack for diffusion preventionIBM·Filed 2014·Granted Apr 12, 2016·2 cites·8 claims
- 3572US7494891B2Trench capacitor with void-free conductor fillIBM·Filed 2006·Granted Feb 24, 2009·5 cites·3 claims
- 3671US7394131B2STI formation in semiconductor device including SOI and bulk silicon regionsIBM·Filed 2006·Granted Jul 1, 2008·4 cites·3 claims
- 3771US6348388B1Process for fabricating a uniform gate oxide of a vertical transistorIBM·Filed 2000·Granted Feb 19, 2002·12 cites·11 claims
- 3870US9905665B2Replacement metal gate stack for diffusion preventionIBM·Filed 2016·Granted Feb 27, 2018·1 cites·17 claims
- 3965US8932932B2Highly scalable trench capacitorIBM·Filed 2013·Granted Jan 13, 2015·2 cites·7 claims
- 4065US8513718B2Stress enhanced transistor devices and methods of makingFALTERMEIER JOHNATHAN E·Filed 2012·Granted Aug 20, 2013·2 cites·6 claims
- 4165US7893480B2Trench memory with self-aligned strap formed by self-limiting processIBM·Filed 2010·Granted Feb 22, 2011·1 cites·15 claims
- 4265US6960523B2Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM deviceIBM·Filed 2003·Granted Nov 1, 2005·10 cites·15 claims
- 4364US8216893B2Stress enhanced transistor devices and methods of makingFALTERMEIER JOHNATHAN E·Filed 2010·Granted Jul 10, 2012·2 cites·10 claims
- 4463US6960514B2Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2004·Granted Nov 1, 2005·9 cites·12 claims
- 4562US6893938B2STI formation for vertical and planar transistorsIBM·Filed 2003·Granted May 17, 2005·9 cites·48 claims
- 4662US6150670AProcess for fabricating a uniform gate oxide of a vertical transistorIBM·Filed 1999·Granted Nov 21, 2000·22 cites·9 claims
- 4761US6686668B2Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact maskIBM·Filed 2001·Granted Feb 3, 2004·8 cites·5 claims
- 4859US10332971B2Replacement metal gate stack for diffusion preventionIBM·Filed 2017·Granted Jun 25, 2019·0 cites·14 claims
- 4958US10008415B2Gate structure cut after formation of epitaxial active regionsIBM·Filed 2017·Granted Jun 26, 2018·0 cites·16 claims
- 5054US9245892B2Semiconductor structure having buried conductive elementsIBM·Filed 2014·Granted Jan 26, 2016·0 cites·10 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →