Inventor · disambiguated record
Wen-Chin Lin
Also filed as: LIN WEN C · LIN WEN-CHIN
69 granted patents·20 pending applications·815 citations·filing 1997–2022
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG35UNITED MICROELECTRONICS CORP20EVERLIGHT USA INC4ADVANCED CONNECTEK INC3TAIWAN SEMICONDUCTOR MFG CO LTD3
Top patents by PatentIndex Score
89 records- 0198US7229883B2Phase change memory device and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 12, 2007·88 cites·24 claims
- 0295US7170775B2MRAM cell with reduced write currentTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 30, 2007·41 cites·14 claims
- 0395US7154798B2MRAM arrays and methods for writing and reading magnetic memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 26, 2006·38 cites·20 claims
- 0494US7349243B23-parameter switching technique for use in MRAM memory arraysTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 25, 2008·37 cites·20 claims
- 0593US10998024B2Method for enhancing tunnel magnetoresistance in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 4, 2021·3 cites·20 claims
- 0693US7545662B2Method and system for magnetic shielding in semiconductor integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 9, 2009·31 cites·20 claims
- 0793US7436698B2MRAM arrays and methods for writing and reading magnetic memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 14, 2008·41 cites·25 claims
- 0892US11532341B2Method for enhancing tunnel magnetoresistance in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·2 cites·20 claims
- 0992US7203129B2Segmented MRAM memory arrayTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 10, 2007·113 cites·12 claims
- 1089US7387667B1Black dye composition and black ink compositionEVERLIGHT USA INC·Filed 2007·Granted Jun 17, 2008·16 cites·17 claims
- 1189US6985383B2Reference generator for multilevel nonlinear resistivity memory storage elementsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 10, 2006·48 cites·32 claims
- 1288US8496493B2Fixing frame and fixing apparatus for storage deviceLIN WEN-CHIN·Filed 2011·Granted Jul 30, 2013·20 cites·15 claims
- 1387US7166881B2Multi-sensing level MRAM structuresTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 23, 2007·41 cites·18 claims
- 1486US8022382B2Phase change memory devices with reduced programming currentTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 20, 2011·19 cites·19 claims
- 1580US10753917B2Hydrogen sensing deviceUNIV NATIONAL CHIAO TUNG·Filed 2018·Granted Aug 25, 2020·3 cites·9 claims
- 1680US6885577B2Magnetic RAM cell device and array architectureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 26, 2005·26 cites·37 claims
- 1778US8367553B2Method for manufacturing through-silicon viaUNITED MICROELECTRONICS CORP·Filed 2010·Granted Feb 5, 2013·6 cites·19 claims
- 1878US7438753B2Diazo dyestuff compounds and their useEVERLIGHT USA INC·Filed 2006·Granted Oct 21, 2008·4 cites·12 claims
- 1977US7719882B2Advanced MRAM designTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 18, 2010·10 cites·9 claims
- 2076US7443638B2Magnetoresistive structures and fabrication methodsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 28, 2008·5 cites·13 claims
- 2175US10249357B1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 2, 2019·5 cites·19 claims
- 2275US7050290B2Integrated capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 23, 2006·21 cites·21 claims
- 2374US12183379B2Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·18 claims
- 2474US9502303B2Method for manufacturing semiconductor device with a barrier layer having overhung portionsUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·2 cites·19 claims
- 2574US8475579B2Black ink compositionCHEN CHIEN-MING·Filed 2010·Granted Jul 2, 2013·2 cites·7 claims
- 2673USD650514SFlower-shaped projection lampLIN CHIH-CHEN·Filed 2011·Granted Dec 13, 2011·25 cites·1 claims
- 2771US6909628B2High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cellTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 21, 2005·17 cites·39 claims
- 2869US9197839B2Display device with front-facing concealable interfacesSHENZHEN GOLDSUN NETWORK INTELLIGENCE TECHNOLOGY CO LTD·Filed 2013·Granted Nov 24, 2015·3 cites·5 claims
- 2969US6755726B2Polishing head with a floating knife-edgeUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jun 29, 2004·14 cites·11 claims
- 3067US8828745B2Method for manufacturing through-silicon viaTSAO WEI-CHE·Filed 2011·Granted Sep 9, 2014·3 cites·8 claims
- 3167US7622358B2Semiconductor device with semi-insulating substrate portions and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 24, 2009·2 cites·15 claims
- 3267US7172908B2Magnetic memory cells and manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 6, 2007·2 cites·14 claims
- 3366US9673053B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jun 6, 2017·1 cites·3 claims
- 3466US9443726B1Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 13, 2016·1 cites·20 claims
- 3564US8349028B2Reactive printing dye and its aqueous composition applicationEVERLIGHT USA INC·Filed 2009·Granted Jan 8, 2013·1 cites·2 claims
- 3663US7035083B2Interdigitated capacitor and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 25, 2006·10 cites·16 claims
- 3762US6873535B1Multiple width and/or thickness write line in MRAMTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 29, 2005·8 cites·39 claims
- 3861US7099176B2Non-orthogonal write line structure in MRAMTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 29, 2006·11 cites·20 claims
- 3961US7071478B2System and method for passing particles on selected areas on a waferTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 4, 2006·4 cites·29 claims
- 4060US10923481B2Semiconductor integrated circuit structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 16, 2021·0 cites·7 claims
- 4160US7312506B2Memory cell structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 25, 2007·4 cites·20 claims
- 4260US7173846B2Magnetic RAM and array architecture using a two transistor, one MTJ cellTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 6, 2007·10 cites·33 claims
- 4359US10943910B2Method for forming semiconductor integrated circuit structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 9, 2021·0 cites·10 claims
- 4458US7042032B2Magnetoresistive (MR) magnetic data storage device with sidewall spacer layer isolationTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 9, 2006·5 cites·16 claims
- 4557US7964900B2Semiconductor device with semi-insulating substrate portionsTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jun 21, 2011·0 cites·13 claims
- 4656US7105879B2Write line design in MRAMTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 12, 2006·7 cites·17 claims
- 4756US5920667ASwitch device for optical fibersIND TECH RES INST·Filed 1997·Granted Jul 6, 1999·25 cites·15 claims
- 4856US2014377514A1Electronic component and manufacturing methodHONGFUJIN PREC IND WUHAN·Filed 2014·Application pending·0 cites
- 4954US10128251B2Semiconductor integrated circuit structure and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Nov 13, 2018·0 cites·6 claims
- 5054US7430112B2Terminal computer display assemblyTUL COOPERATION·Filed 2005·Granted Sep 30, 2008·1 cites·16 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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