Inventor · disambiguated record

Jian Zhu

Also filed as: ZHU JIAN · ZHU JIAN-GANG · ZHU JIAN-GANG JIMMY

77 granted patents·8 pending applications·1,454 citations·filing 1994–2025

99Inventor score

Technology areasG11B H01F G11C H10N G01R

Files withTAIWAN SEMICONDUCTOR MFG CO LTD28 UNIV CARNEGIE MELLON14 HEADWAY TECH INC10 READ RITE CORP6 WESTERN DIGITAL TECH INC6

Top patents by PatentIndex Score

85 records

0199US7616412B2Perpendicular spin-torque-driven magnetic oscillatorUNIV CARNEGIE MELLON·Filed 2006·Granted Nov 10, 2009·132 cites·32 claims
0299US6404601B1Merged write head with magnetically isolated poletipREAD RITE CORP·Filed 2000·Granted Jun 11, 2002·181 cites·21 claims
0398US11417835B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·5 cites·20 claims
0498US10014465B1Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyHEADWAY TECH INC·Filed 2017·Granted Jul 3, 2018·22 cites·13 claims
0598US9780299B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2015·Granted Oct 3, 2017·11 cites·19 claims
0698US6185077B1Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structureREAD RITE CORP·Filed 1999·Granted Feb 6, 2001·176 cites·22 claims
0798US5576914ACompact read/write head having biased GMR elementREAD RITE CORP·Filed 1994·Granted Nov 19, 1996·113 cites·6 claims
0897US10957851B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·20 claims
0997US10861485B1Write heads configured to redirect currentWESTERN DIGITAL TECH INC·Filed 2020·Granted Dec 8, 2020·8 cites·16 claims
1097US10522752B1Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·10 cites·22 claims
1196US10665773B2Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·7 cites·20 claims
1296US9425387B1Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealingHEADWAY TECH INC·Filed 2015·Granted Aug 23, 2016·59 cites·31 claims
1396US6392850B1Magnetoresistive transducer having a common magnetic bias using assertive and complementary signalsREAD RITE CORP·Filed 1998·Granted May 21, 2002·155 cites·15 claims
1495US10777219B1Write heads configured to redirect currentWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 15, 2020·16 cites·20 claims
1595US9842988B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsHEADWAY TECH INC·Filed 2015·Granted Dec 12, 2017·6 cites·11 claims
1694US10891975B1Magnetic head with assisted magnetic recording and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 12, 2021·11 cites·16 claims
1794US10891974B1Magnetic head with current assisted magnetic recording and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 12, 2021·16 cites·22 claims
1894US10658577B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·3 cites·20 claims
1994US6754016B2Frequency modulation pattern for disk drive assembliesUNIV CARNEGIE MELLON·Filed 2001·Granted Jun 22, 2004·62 cites·30 claims
2093US11373675B2Magnetic head with assisted magnetic recordingWESTERN DIGITAL TECH INC·Filed 2021·Granted Jun 28, 2022·3 cites·19 claims
2193US9805816B2Implementation of a one time programmable memory using a MRAM stack designHEADWAY TECH INC·Filed 2016·Granted Oct 31, 2017·15 cites·52 claims
2293US6667862B2Magnetoresistive read head having permanent magnet on top of magnetoresistive elementUNIV CARNEGIE MELLON·Filed 2001·Granted Dec 23, 2003·40 cites·35 claims
2392US11017802B2Magnetic head with assisted magnetic recording and method of making thereofWESTERN DIGITAL TECH INC·Filed 2020·Granted May 25, 2021·4 cites·20 claims
2492US10763428B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·3 cites·17 claims
2592US7826258B2Crossbar diode-switched magnetoresistive random access memory systemUNIV CARNEGIE MELLON·Filed 2008·Granted Nov 2, 2010·28 cites·38 claims
2692US6956257B2Magnetic memory element and memory device including sameUNIV CARNEGIE MELLON·Filed 2003·Granted Oct 18, 2005·63 cites·33 claims
2791US9890043B2Sorting two-dimensional nanomaterials by thicknessUNIV NORTHWESTERN·Filed 2015·Granted Feb 13, 2018·4 cites·17 claims
2891US2024381779A1Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment EnhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2990US10896690B1Magnetic head with current assisted magnetic recording and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 19, 2021·10 cites·10 claims
3090US5784224ACompact read/write head having biased GMR elementREAD RITE CORP·Filed 1996·Granted Jul 21, 1998·52 cites·7 claims
3188US6807033B2Magnetic sensor with reduced wing region magnetic sensitivityUNIV CARNEGIE MELLON·Filed 2002·Granted Oct 19, 2004·25 cites·13 claims
3287US10522744B2High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·4 cites·19 claims
3387US10115892B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2017·Granted Oct 30, 2018·2 cites·7 claims
3487US8400066B1Magnetic logic circuits and systems incorporating samePILEGGI LAWRENCE T·Filed 2010·Granted Mar 19, 2013·13 cites·31 claims
3586US8476925B2Magnetic switching cells and methods of making and operating sameZHU JIAN-GANG JIMMY·Filed 2010·Granted Jul 2, 2013·8 cites·3 claims
3686US6391483B1Magnetic device and method of forming sameUNIV CARNEGIE MELLON·Filed 1999·Granted May 21, 2002·80 cites·51 claims
3785US11017801B1Magnetic head with assisted magnetic recording and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 25, 2021·5 cites·20 claims
3885US10431736B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·1 cites·20 claims
3984US10230044B2Fully compensated synthetic ferromagnet for spintronics applicationsHEADWAY TECH INC·Filed 2017·Granted Mar 12, 2019·1 cites·8 claims
4083US9030783B1Phase detection of spin torque oscillator reader excited through parametric excitationHGST Netherlands BV·Filed 2014·Granted May 12, 2015·6 cites·22 claims
4183US5859754AMagnetoresistive transducer having a common magnetic bias using assertive and complementary signalsREAD RITE CORP·Filed 1997·Granted Jan 12, 1999·47 cites·9 claims
4281US11387405B2Resonance rotating spin-transfer torque memory deviceUNIV CARNEGIE MELLON·Filed 2018·Granted Jul 12, 2022·2 cites·19 claims
4381US10522747B2Fully compensated synthetic ferromagnet for spintronics applicationsHEADWAY TECH INC·Filed 2019·Granted Dec 31, 2019·3 cites·20 claims
4480US2024381780A1Method for forming a perpendicular spin torque oscillator (psto) including forming a magneto resistive sensor (mr) over a spin torque oscillator (sto)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4579US12183574B2Two-dimensional semiconductor based printable optoelectronic inks, fabricating methods and applications of sameUNIV NORTHWESTERN·Filed 2023·Granted Dec 31, 2024·0 cites·9 claims
4679US12167699B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
4779US11849646B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
4879US9300301B2Nonvolatile magnetic logic deviceUNIV CARNEGIE MELLON·Filed 2013·Granted Mar 29, 2016·7 cites·32 claims
4978US10509074B2Electrical testing apparatus for spintronics devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·28 claims
5078US2025338775A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 85 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →