Inventor · disambiguated record
Dale C. Jacobson
Also filed as: JACOBSON DALE C · JACOBSON DALE CONRAD
23 granted patents·8 pending applications·579 citations·filing 1983–2013
97Inventor score
Top patents by PatentIndex Score
31 records- 0196US7629590B2Method and apparatus for extending equipment uptime in ion implantationSEMEQUIP INC·Filed 2006·Granted Dec 8, 2009·41 cites·22 claims
- 0295US7491953B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsSEMEQUIP INC·Filed 2006·Granted Feb 17, 2009·25 cites·8 claims
- 0393US8110820B2Ion beam apparatus and method for ion implantationGLAVISH HILTON F·Filed 2007·Granted Feb 7, 2012·23 cites·50 claims
- 0492US7791047B2Method and apparatus for extracting ions from an ion source for use in ion implantationSEMEQUIP INC·Filed 2006·Granted Sep 7, 2010·17 cites·5 claims
- 0591US8071958B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsHORSKY THOMAS N·Filed 2008·Granted Dec 6, 2011·11 cites·6 claims
- 0690US7919402B2Cluster ion implantation for defect engineeringSEMEQUIP INC·Filed 2008·Granted Apr 5, 2011·25 cites·17 claims
- 0790US5249195AErbium doped optical devicesAT & T BELL LAB·Filed 1992·Granted Sep 28, 1993·76 cites·28 claims
- 0890US5107538AOptical waveguide system comprising a rare-earth Si-based optical deviceAT & T BELL LAB·Filed 1991·Granted Apr 21, 1992·108 cites·10 claims
- 0989US8436326B2Ion beam apparatus and method employing magnetic scanningGLAVISH HILTON F·Filed 2010·Granted May 7, 2013·9 cites·5 claims
- 1088US8618514B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsHORSKY THOMAS N·Filed 2011·Granted Dec 31, 2013·5 cites·6 claims
- 1187US7820981B2Method and apparatus for extending equipment uptime in ion implantationSEMEQUIP INC·Filed 2004·Granted Oct 26, 2010·30 cites·62 claims
- 1286US7851773B2Ion beam apparatus and method employing magnetic scanningSEMIQUIP INC·Filed 2007·Granted Dec 14, 2010·13 cites·40 claims
- 1382US8410459B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsHORSKY THOMAS N·Filed 2011·Granted Apr 2, 2013·3 cites·2 claims
- 1482US8368309B2Method and apparatus for extracting ions from an ion source for use in ion implantationSEMEQUIP INC·Filed 2006·Granted Feb 5, 2013·6 cites·23 claims
- 1579US8236675B2Semiconductor device and method of fabricating a semiconductor deviceKRULL WADE A·Filed 2009·Granted Aug 7, 2012·5 cites·5 claims
- 1679US7960709B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsSEMEQUIP INC·Filed 2003·Granted Jun 14, 2011·18 cites·20 claims
- 1779US4555301AFormation of heterostructures by pulsed melting of precursor materialAT & T BELL LAB·Filed 1983·Granted Nov 26, 1985·32 cites·17 claims
- 1875US6544431B2Thin film lithium niobate structure and method of making the sameTRIQUINT TECHNOLOGY HOLDING CO·Filed 2001·Granted Apr 8, 2003·16 cites·6 claims
- 1974US6172791B1Electro-optic modulatorsLUCENT TECHNOLOGIES INC·Filed 1999·Granted Jan 9, 2001·45 cites·20 claims
- 2073US5039190AApparatus comprising an optical gain device, and method of producing the deviceAT & T BELL LAB·Filed 1990·Granted Aug 13, 1991·32 cites·12 claims
- 2172US7723233B2Semiconductor device and method of fabricating a semiconductor deviceSEMEQUIP INC·Filed 2003·Granted May 25, 2010·12 cites·23 claims
- 2264US7994031B2Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ionsSEMEQUIP INC·Filed 2006·Granted Aug 9, 2011·1 cites·42 claims
- 2360US5631490AMetal semiconductor metal photodetectorsLUCENT TECHNOLOGIES INC·Filed 1995·Granted May 20, 1997·26 cites·5 claims
- 2459US2014061816A1Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsSEMEQUIP INC·Filed 2013·Application pending·0 cites
- 2556US2007181830A1Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsSEMEQUIP INC·Filed 2006·Application pending·0 cites
- 2651US2006272776A1Method and apparatus for extracting ions from an ion source for use in ion implantationHORSKY THOMAS N·Filed 2006·Application pending·0 cites
- 2745US2008305598A1Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular speciesHORSKY THOMAS N·Filed 2007·Application pending·0 cites
- 2844US2008200020A1Semiconductor device and method of fabricating a semiconductor deviceSEMEQUIP INC·Filed 2006·Application pending·0 cites
- 2941US2004002202A1Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ionsFiled 2002·Application pending·0 cites
- 3039US2008242066A1Method Of Manufacturing SemiconductorSEMIEQUIP INC·Filed 2005·Application pending·0 cites
- 3138US2003015497A1Method of etching ferroelectric materialFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →