Inventor · disambiguated record
Hans Norstrom
Also filed as: NORSTROEM HANS · NORSTROM HANS · NORSTROM HANS ERIK
29 granted patents·4 pending applications·614 citations·filing 1986–2014
97Inventor score
Files withERICSSON TELEFON AB L M17INFINEON TECHNOLOGIES AG8INFINEON TECHNOLOGIES WIRELESS1K EKLUND INNOVATION1STIFTELSEN INST MIKROVAGS1
Top patents by PatentIndex Score
33 records- 0191US7008836B2Method to provide a triple well in an epitaxially based CMOS or BiCMOS processINFINEON TECHNOLOGIES WIRELESS·Filed 2004·Granted Mar 7, 2006·126 cites·16 claims
- 0291US6657242B1Trench-isolated bipolar devicesERICSSON TELEFON AB L M·Filed 2000·Granted Dec 2, 2003·74 cites·19 claims
- 0382US6440810B1Method in the fabrication of a silicon bipolar transistorERICSSON TELEFON AB L M·Filed 2000·Granted Aug 27, 2002·32 cites·29 claims
- 0481US6720229B2Integrated circuit inductor structure and non-destructive etch depth measurementERICSSON TELEFON AB L M·Filed 2001·Granted Apr 13, 2004·33 cites·23 claims
- 0576US6413835B1Semiconductor structure and fabrication method of shallow and deep trenchesERICSSON TELEFON AB L M·Filed 2000·Granted Jul 2, 2002·21 cites·16 claims
- 0675US6459140B1Indium-enhanced bipolar transistorERICSSON TELEFON AB L M·Filed 2000·Granted Oct 1, 2002·18 cites·18 claims
- 0774US7495312B2Method for producing vertical bipolar transistors and integrated circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 24, 2009·9 cites·4 claims
- 0873US4740484AMethod in the manufacture of integrated circuitsSTIFTELSEN INST MIKROVAGS·Filed 1986·Granted Apr 26, 1988·36 cites·8 claims
- 0971US6406972B2Integrated circuit, components thereof and manufacturing methodERICSSON TELEFON AB L M·Filed 2001·Granted Jun 18, 2002·12 cites·34 claims
- 1069US6690080B2Semiconductor structure for isolation of semiconductor devicesERICSSON TELEFON AB L M·Filed 2002·Granted Feb 10, 2004·14 cites·20 claims
- 1168US6472723B1Substrate contacts and shielding devices in a semiconductor componentERICSSON TELEFON AB L M·Filed 1997·Granted Oct 29, 2002·46 cites·27 claims
- 1267US6121102AMethod of electrical connection through an isolation trench to form trench-isolated bipolar devicesTELFONAKTIEBOLAGET LM ERICSSON·Filed 1998·Granted Sep 19, 2000·33 cites·24 claims
- 1366US7119415B2Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereofINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 10, 2006·12 cites·13 claims
- 1464US7008851B2Silicon-germanium mesa transistorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 7, 2006·11 cites·15 claims
- 1561US6100574ACapacitors in integrated circuitsERICSSON TELEFON AB L M·Filed 1998·Granted Aug 8, 2000·26 cites·10 claims
- 1660US7217609B2Semiconductor fabrication process, lateral PNP transistor, and integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 15, 2007·9 cites·14 claims
- 1760US6610578B2Methods of manufacturing bipolar transistors for use at radio frequenciesERICSSON TELEFON AB L M·Filed 1998·Granted Aug 26, 2003·30 cites·14 claims
- 1856US6333216B1Method in the manufacturing of a semiconductor deviceERICSSON TELEFON AB L M·Filed 2000·Granted Dec 25, 2001·4 cites·7 claims
- 1955US7025615B2Fabrication method, varactor, and integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 11, 2006·7 cites·21 claims
- 2052US6852638B2Selective base etchingINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 8, 2005·3 cites·31 claims
- 2152US2010055860A1Semiconductor Process and Integrated CircuitINFINEON TECHNOLOGIES AG·Filed 2009·Application pending·0 cites
- 2250US10209215B2Integrated circuit sensor device for charge detection hybridizing a lateral metal oxide semiconductor field effect transistor (MOSFET) and a vertical bipolar junction transistor (BJT)K EKLUND INNOVATION·Filed 2014·Granted Feb 19, 2019·0 cites·18 claims
- 2350US6291859B1Integrated circuitsERICSSON TELEFON AB L M·Filed 1999·Granted Sep 18, 2001·16 cites·11 claims
- 2449US6163446AProtective circuitERICSSON TELEFON AB L M·Filed 1998·Granted Dec 19, 2000·12 cites·33 claims
- 2547US6579773B2Transistor device and fabrication method thereofERICSSON TELEFON AB L M·Filed 2001·Granted Jun 17, 2003·3 cites·22 claims
- 2647US6251739B1Integrated circuit, components thereof and manufacturing methodERICSSON TELEFON AB L M·Filed 1998·Granted Jun 26, 2001·11 cites·20 claims
- 2740US6911368B2Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangementINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jun 28, 2005·0 cites·5 claims
- 2840US2005067653A1Vertical DMOS transistor device, integrated circuit, and fabrication method thereofFiled 2004·Application pending·0 cites
- 2938US6077752AMethod in the manufacturing of a semiconductor deviceERICSSON TELEFON AB L M·Filed 1998·Granted Jun 20, 2000·6 cites·8 claims
- 3038US2005020003A1Semiconductor process and integrated circuitFiled 2003·Application pending·0 cites
- 3136US6100133ACapacitors in integrated circuitsERICSSON TELEFON AB L M·Filed 1998·Granted Aug 8, 2000·6 cites·18 claims
- 3236US2005087834A1High frequency power transistor device, integrated circuit, and fabrication method thereofFiled 2004·Application pending·0 cites
- 3334US6504232B2Integrated circuit components thereof and manufacturing methodTELEFONKTIEBOLAGET LM ERICSSON·Filed 1998·Granted Jan 7, 2003·4 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →