Inventor · disambiguated record
Donald M. Archer
Also filed as: ARCHER DONALD · ARCHER DONALD M
16 granted patents·363 citations·filing 1991–2012
94Inventor score
Top patents by PatentIndex Score
16 records- 0191US8101479B2Fabrication of asymmetric field-effect transistors using L-shaped spacersPARKER D COURTNEY·Filed 2009·Granted Jan 24, 2012·32 cites·44 claims
- 0287US8735980B2Configuration and fabrication of semiconductor structure using empty and filled wellsNAT SEMICONDUCTOR CORP·Filed 2012·Granted May 27, 2014·7 cites·18 claims
- 0387US6775112B1Apparatus and method for improving ESD and transient immunity in shunt regulatorsNAT SEMICONDUCTOR CORP·Filed 2001·Granted Aug 10, 2004·39 cites·22 claims
- 0486US5311115AEnhancement-depletion mode cascode current mirrorNAT SEMICONDUCTOR CORP·Filed 1993·Granted May 10, 1994·71 cites·18 claims
- 0586US5200654ATrim correction circuit with temperature coefficient compensationNAT SEMICONDUCTOR CORP·Filed 1991·Granted Apr 6, 1993·42 cites·7 claims
- 0684US8304835B2Configuration and fabrication of semiconductor structure using empty and filled wellsBULUCEA CONSTANTIN·Filed 2009·Granted Nov 6, 2012·8 cites·82 claims
- 0784US5844299AIntegrated inductorNAT SEMICONDUCTOR CORP·Filed 1997·Granted Dec 1, 1998·59 cites·11 claims
- 0880US5808513ARail-to-rail input common mode range differential amplifier that operates with very low rail-to-rail voltagesNAT SEMICONDUCTOR CORP·Filed 1997·Granted Sep 15, 1998·42 cites·3 claims
- 0979US8629027B1Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensionsBULUCEA CONSTANTIN·Filed 2011·Granted Jan 14, 2014·4 cites·34 claims
- 1075US7968921B2Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensionsNAT SEMICONDUCTOR CORP·Filed 2009·Granted Jun 28, 2011·4 cites·20 claims
- 1174US5764101ARail-to-rail input common mode range differential amplifier that operates with very low rail-to-rail voltagesNAT SEMICONDUCTOR CORP·Filed 1997·Granted Jun 9, 1998·31 cites·2 claims
- 1271US8084827B2Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknessesBULUCEA CONSTANTIN·Filed 2009·Granted Dec 27, 2011·3 cites·38 claims
- 1365US5386160ATrim correction circuit with temperature coefficient compensationNAT SEMICONDUCTOR CORP·Filed 1993·Granted Jan 31, 1995·15 cites·7 claims
- 1448US8377768B2Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknessesNAT SEMICONDUCTOR CORP·Filed 2011·Granted Feb 19, 2013·0 cites·22 claims
- 1548US6605979B1Trim bit circuit for band-gap referenceNAT SEMICONDUCTOR CORP·Filed 2001·Granted Aug 12, 2003·6 cites·6 claims
- 1631US7480190B1Known default data state EPROMNAT SEMICONDUCTOR CORP·Filed 2006·Granted Jan 20, 2009·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →