Inventor · disambiguated record
Larry D. Mcmillan
Also filed as: MCMILLAN LARRY · MCMILLAN LARRY D
107 granted patents·9 pending applications·6,469 citations·filing 1974–2006
99Inventor score
Files withSYMETRIX CORP102MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3RAMTRON CORP3MOTOROLA INC2OLYMPUS OPTICAL CO2
Top patents by PatentIndex Score
116 records- 0199US5119760AMethods and apparatus for material depositionSYMETRIX CORP·Filed 1990·Granted Jun 9, 1992·588 cites·20 claims
- 0298US7298640B21T1R resistive memory array with chained structureSYMETRIX CORP·Filed 2005·Granted Nov 20, 2007·135 cites·5 claims
- 0398US6110531AMethod and apparatus for preparing integrated circuit thin films by chemical vapor depositionSYMETRIX CORP·Filed 1997·Granted Aug 29, 2000·523 cites·31 claims
- 0498US5519234AFerroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage currentSYMETRIX CORP·Filed 1993·Granted May 21, 1996·441 cites·23 claims
- 0597US6924997B2Ferroelectric memory and method of operating sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 2, 2005·198 cites·12 claims
- 0697US5561307AFerroelectric integrated circuitSYMETRIX CORP·Filed 1994·Granted Oct 1, 1996·208 cites·9 claims
- 0796US6511718B1Method and apparatus for fabrication of thin films by chemical vapor depositionSYMETRIX CORP·Filed 1998·Granted Jan 28, 2003·191 cites·25 claims
- 0895US6198225B1Ferroelectric flat panel displaysSYMETRIX CORP·Filed 1999·Granted Mar 6, 2001·109 cites·52 claims
- 0995US5523964AFerroelectric non-volatile memory unitSYMETRIX CORP·Filed 1994·Granted Jun 4, 1996·111 cites·21 claims
- 1094US6370056B1Ferroelectric memory and method of operating sameSYMETRIX CORP·Filed 2000·Granted Apr 9, 2002·88 cites·26 claims
- 1194US6365927B1Ferroelectric integrated circuit having hydrogen barrier layerSYMETRIX CORP·Filed 2000·Granted Apr 2, 2002·76 cites·21 claims
- 1294US6051858AFerroelectric/high dielectric constant integrated circuit and method of fabricating sameSYMETRIX CORP·Filed 1997·Granted Apr 18, 2000·125 cites·10 claims
- 1394US5466629AProcess for fabricating ferroelectric integrated circuitSYMETRIX CORP·Filed 1995·Granted Nov 14, 1995·134 cites·6 claims
- 1493US6258733B1Method and apparatus for misted liquid source deposition of thin film with reduced mist particle sizeSYMETRIX CORP·Filed 2000·Granted Jul 10, 2001·60 cites·6 claims
- 1592US7075134B2Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the sameSYMETRIX CORP·Filed 2003·Granted Jul 11, 2006·57 cites·60 claims
- 1692US5614252AMethod of fabricating barium strontium titanateSYMETRIX CORP·Filed 1995·Granted Mar 25, 1997·129 cites·18 claims
- 1792US5456945AMethod and apparatus for material depositionSYMETRIX CORP·Filed 1992·Granted Oct 10, 1995·139 cites·29 claims
- 1892US5138520AMethods and apparatus for material depositionSYMETRIX CORP·Filed 1989·Granted Aug 11, 1992·104 cites·23 claims
- 1991US6781184B2Barrier layers for protecting metal oxides from hydrogen degradationSYMETRIX CORP·Filed 2001·Granted Aug 24, 2004·48 cites·53 claims
- 2091US5434102AProcess for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 1993·Granted Jul 18, 1995·109 cites·44 claims
- 2190US5699035AZnO thin-film varistors and method of making the sameSYMETRIX CORP·Filed 1995·Granted Dec 16, 1997·104 cites·8 claims
- 2290US5559733AMemory with ferroelectric capacitor connectable to transistor gateSYMETRIX CORP·Filed 1995·Granted Sep 24, 1996·68 cites·4 claims
- 2390US4279947ADeposition of silicon nitrideMOTOROLA INC·Filed 1979·Granted Jul 21, 1981·45 cites·4 claims
- 2489US5759923AMethod and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuitsSYMETRIX CORP·Filed 1996·Granted Jun 2, 1998·102 cites·18 claims
- 2588US6686489B2Metal organic precursors for transparent metal oxide thin films and method of making sameSYMETRIX CORP·Filed 2001·Granted Feb 3, 2004·16 cites·17 claims
- 2688US5540772AMisted deposition apparatus for fabricating an integrated circuitSYMETRIX CORP·Filed 1994·Granted Jul 30, 1996·100 cites·25 claims
- 2788US5406510ANon-volatile memorySYMETRIX CORP·Filed 1993·Granted Apr 11, 1995·68 cites·19 claims
- 2887US6830623B2Method of liquid deposition by selection of liquid viscosity and other precursor propertiesSYMETRIX CORP·Filed 2002·Granted Dec 14, 2004·32 cites·14 claims
- 2987US5468684AIntegrated circuit with layered superlattice material and method of fabricating sameSYMETRIX CORP·Filed 1993·Granted Nov 21, 1995·110 cites·46 claims
- 3087US4707897AMonolithic semiconductor integrated circuit ferroelectric memory device, and methods of fabricating and utilizing sameRAMTRON CORP·Filed 1980·Granted Nov 24, 1987·45 cites·26 claims
- 3186US6831313B2Ferroelectric composite material, method of making same and memory utilizing sameSYMETRIX CORP·Filed 2002·Granted Dec 14, 2004·34 cites·14 claims
- 3286US6203619B1Multiple station apparatus for liquid source fabrication of thin filmsSYMETRIX CORP·Filed 1998·Granted Mar 20, 2001·78 cites·20 claims
- 3386US5463244AAntifuse programmable element using ferroelectric materialSYMETRIX CORP·Filed 1994·Granted Oct 31, 1995·104 cites·22 claims
- 3485US5962085AMisted precursor deposition apparatus and method with improved mist and mist flowSYMETRIX CORP·Filed 1996·Granted Oct 5, 1999·75 cites·56 claims
- 3584US6537830B1Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric materialSYMETRIX CORP·Filed 2000·Granted Mar 25, 2003·31 cites·34 claims
- 3684US6404003B1Thin film capacitors on silicon germanium substrateSYMETRIX CORP·Filed 1999·Granted Jun 11, 2002·46 cites·26 claims
- 3784US5514822APrecursors and processes for making metal oxidesSYMETRIX CORP·Filed 1993·Granted May 7, 1996·70 cites·22 claims
- 3883US6559469B1Ferroelectric and high dielectric constant transistorsSYMETRIX CORP·Filed 2000·Granted May 6, 2003·28 cites·53 claims
- 3983US5541870AFerroelectric memory and non-volatile memory cell for sameSYMETRIX CORP·Filed 1994·Granted Jul 30, 1996·47 cites·41 claims
- 4082US6056994ALiquid deposition methods of fabricating layered superlattice materialsSYMETRIX CORP·Filed 1995·Granted May 2, 2000·63 cites·37 claims
- 4182US5423285AProcess for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applicationsOLYMPUS OPTICAL CO·Filed 1992·Granted Jun 13, 1995·76 cites·19 claims
- 4282US5316579AApparatus for forming a thin film with a mist forming meansSYMETRIX CORP·Filed 1992·Granted May 31, 1994·95 cites·8 claims
- 4381US5439845AProcess for fabricating layered superlattice materials and making electronic devices including sameOLYMPUS OPTICAL CO·Filed 1994·Granted Aug 8, 1995·55 cites·5 claims
- 4480US5719416AIntegrated circuit with layered superlattice material compoundSYMETRIX CORP·Filed 1994·Granted Feb 17, 1998·72 cites·28 claims
- 4579US6104049AFerroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making sameSYMETRIX CORP·Filed 1999·Granted Aug 15, 2000·53 cites·11 claims
- 4679US5955754AIntegrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the sameSYMETRIX CORP·Filed 1995·Granted Sep 21, 1999·45 cites·34 claims
- 4779US5612082AProcess for making metal oxidesSYMETRIX CORP·Filed 1994·Granted Mar 18, 1997·67 cites·40 claims
- 4878US7154768B2Non-destructive readout of ferroelectric memoriesMATUSHITA ELECTRIC IND CO LTD·Filed 2005·Granted Dec 26, 2006·11 cites·31 claims
- 4978US6383555B1Misted precursor deposition apparatus and method with improved mist and mist flowSYMETRIX CORP·Filed 2000·Granted May 7, 2002·18 cites·10 claims
- 5078US6376691B1Metal organic precursors for transparent metal oxide thin films and method of making sameSYMETRIX CORP·Filed 1999·Granted Apr 23, 2002·15 cites·27 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →