Inventor · disambiguated record
Yee-Chaung See
Also filed as: SEE YEE-CHAUNG
15 granted patents·763 citations·filing 1981–2013
95Inventor score
Files withMOTOROLA INC10TEXAS INSTRUMENTS INC3TAIWAN SEMICONDUCTOR MFG1TAIWAN SEMICONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
15 records- 0197US4374700AMethod of manufacturing silicide contacts for CMOS devicesTEXAS INSTRUMENTS INC·Filed 1981·Granted Feb 22, 1983·173 cites·10 claims
- 0290US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
- 0390US5279978AProcess for making BiCMOS device having an SOI substrateMOTOROLA INC·Filed 1992·Granted Jan 18, 1994·81 cites·10 claims
- 0490US5212397ABiCMOS device having an SOI substrate and process for making the sameMOTOROLA INC·Filed 1990·Granted May 18, 1993·81 cites·10 claims
- 0588US4775642AModified source/drain implants in a double-poly non-volatile memory processMOTOROLA INC·Filed 1987·Granted Oct 4, 1988·60 cites·19 claims
- 0686US5777361ASingle gate nonvolatile memory cell and method for accessing the sameMOTOROLA INC·Filed 1996·Granted Jul 7, 1998·67 cites·19 claims
- 0785US4476482ASilicide contacts for CMOS devicesTEXAS INSTRUMENTS INC·Filed 1982·Granted Oct 9, 1984·40 cites·8 claims
- 0883US5892709ASingle level gate nonvolatile memory device and method for accessing the sameMOTOROLA INC·Filed 1997·Granted Apr 6, 1999·54 cites·20 claims
- 0981US5929478ASingle level gate nonvolatile memory device and method for accessing the sameMOTOROLA INC·Filed 1997·Granted Jul 27, 1999·46 cites·9 claims
- 1079US7449386B2Manufacturing method for semiconductor device to mitigate short channel effectsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 11, 2008·9 cites·18 claims
- 1177US5674762AMethod of fabricating an EPROM with high voltage transistorsMOTOROLA INC·Filed 1995·Granted Oct 7, 1997·38 cites·14 claims
- 1276US5604700ANon-volatile memory cell having a single polysilicon gateMOTOROLA INC·Filed 1995·Granted Feb 18, 1997·34 cites·19 claims
- 1366US5112772AMethod of fabricating a trench structureMOTOROLA INC·Filed 1991·Granted May 12, 1992·38 cites·14 claims
- 1452US4418094AVertical-etch direct moat isolation processTEXAS INSTRUMENTS INC·Filed 1982·Granted Nov 29, 1983·18 cites·9 claims
- 1549US5358883ALateral bipolar transistorMOTOROLA INC·Filed 1993·Granted Oct 25, 1994·13 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →