Inventor · disambiguated record
Samuel C. Ramac
Also filed as: RAMAC SAMUEL C
8 granted patents·1 pending application·186 citations·filing 1995–2004
89Inventor score
Top patents by PatentIndex Score
9 records- 0188US6656809B2Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristicsIBM·Filed 2002·Granted Dec 2, 2003·40 cites·9 claims
- 0276US6787427B2Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristicsIBM·Filed 2003·Granted Sep 7, 2004·17 cites·11 claims
- 0375US5747866AApplication of thin crystalline Si3 N4 liners in shallow trench isolation (STI) structuresSIEMENS AG·Filed 1997·Granted May 5, 1998·41 cites·13 claims
- 0475US5643823AApplication of thin crystalline Si3 N4 liners in shallow trench isolation (STI) structuresSIEMENS AG·Filed 1995·Granted Jul 1, 1997·45 cites·5 claims
- 0567US5899724AMethod for fabricating a titanium resistorIBM·Filed 1996·Granted May 4, 1999·26 cites·14 claims
- 0664US6670263B2Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain sizeIBM·Filed 2001·Granted Dec 30, 2003·9 cites·5 claims
- 0763US6893948B2Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain sizeIBM·Filed 2003·Granted May 17, 2005·8 cites·17 claims
- 0840US7714366B2CMOS transistor with a polysilicon gate electrode having varying grain sizeIBM·Filed 2004·Granted May 11, 2010·0 cites·4 claims
- 0932US2002155665A1Formation of notched gate using a multi-layer stackIBM·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →