Inventor · disambiguated record
Naotaka Iwata
Also filed as: IWATA NAOTAKA
17 granted patents·2 pending applications·384 citations·filing 1985–2018
95Inventor score
Top patents by PatentIndex Score
19 records- 0191US6552373B2Hetero-junction field effect transistor having an intermediate layerNEC CORP·Filed 2001·Granted Apr 22, 2003·65 cites·20 claims
- 0286US10680091B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2018·Granted Jun 9, 2020·5 cites·20 claims
- 0386US6353360B1Linearized power amplifier based on active feedforward-type predistortionNEC CORP·Filed 2001·Granted Mar 5, 2002·40 cites·22 claims
- 0484US6724253B2Predistortion type linearizer controlled by two control voltagesNEC COMPOUND SEMICONDUCTOR·Filed 2002·Granted Apr 20, 2004·34 cites·18 claims
- 0581US6534790B2Compound semiconductor field effect transistorNEC CORP·Filed 2001·Granted Mar 18, 2003·28 cites·28 claims
- 0680US6144051ASemiconductor device having a metal-insulator-metal capacitorNEC CORP·Filed 1998·Granted Nov 7, 2000·46 cites·8 claims
- 0778US6720200B2Field effect transistor and fabrication process thereofNEC CORP·Filed 2001·Granted Apr 13, 2004·19 cites·6 claims
- 0873US6130589AMatching circuit and a method for matching a transistor circuitNEC CORP·Filed 1998·Granted Oct 10, 2000·34 cites·8 claims
- 0966US6025613ASemiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the sameNEC CORP·Filed 1998·Granted Feb 15, 2000·25 cites·3 claims
- 1065US6072205APassive element circuitNEC CORP·Filed 1998·Granted Jun 6, 2000·32 cites·11 claims
- 1164US6570194B2Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the sameNEC CORP·Filed 2001·Granted May 27, 2003·12 cites·23 claims
- 1258US6624440B2Field effect transistorNEC CORP·Filed 2001·Granted Sep 23, 2003·7 cites·11 claims
- 1349US6436756B1Semiconductor device and fabrication method thereofNEC CORP·Filed 1998·Granted Aug 20, 2002·11 cites·3 claims
- 1441US6426523B1Heterojunction field effect transistorNEC CORP·Filed 1997·Granted Jul 30, 2002·8 cites·10 claims
- 1540US5943577AMethod of making heterojunction bipolar structure having air and implanted isolationsNEC CORP·Filed 1997·Granted Aug 24, 1999·12 cites·21 claims
- 1636US2002003245A1Compound semiconductor device and method of manufacturing the sameNEC CORP·Filed 2001·Application pending·0 cites
- 1732US6388530B1Microwave amplifier implemented by heterojunction field effect transistorsNEC CORP·Filed 1999·Granted May 14, 2002·2 cites·7 claims
- 1831US4689646ADepletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the sameNEC CORP·Filed 1985·Granted Aug 25, 1987·4 cites·13 claims
- 1928US2002074563A1Field effect transistorFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →