Inventor · disambiguated record
Horng-Bor Lu
Also filed as: LU HORNG-BOR
27 granted patents·2 pending applications·452 citations·filing 1996–2014
97Inventor score
Files withUNITED MICROELECTRONICS CORP28
Top patents by PatentIndex Score
29 records- 0185US6013581AMethod for preventing poisoned vias and trenchesUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 11, 2000·76 cites·23 claims
- 0282US5876508AMethod of cleaning slurry remnants after the completion of a chemical-mechanical polish processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Mar 2, 1999·73 cites·6 claims
- 0377US5883014AMethod for treating via sidewalls with hydrogen plasmaUNITED MICROELECTRONICS CORP·Filed 1997·Granted Mar 16, 1999·61 cites·10 claims
- 0476US6071806AMethod for preventing poisoned vias and trenchesUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 6, 2000·46 cites·20 claims
- 0569US9378968B2Method for planarizing semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jun 28, 2016·2 cites·9 claims
- 0661US6333261B1Method for preventing aluminum intrusionsUNITED MICROELECTRONICS CORP·Filed 2000·Granted Dec 25, 2001·13 cites·12 claims
- 0756US6225204B1Method for preventing poisoned vias and trenchesUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 1, 2001·21 cites·25 claims
- 0852US6180467B1Method of fabricating shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 30, 2001·17 cites·20 claims
- 0951US6057248AMethod of removing residual contaminants in an alignment mark after a CMP processUNITED MICROELECTRONICS CORP·Filed 1997·Granted May 2, 2000·16 cites·8 claims
- 1050US6146742ABarrier/glue layer on polysilicon layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 14, 2000·12 cites·11 claims
- 1150US6008108AMethod of fabricating a shallow-trench isolation structure in an integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 28, 1999·21 cites·18 claims
- 1246US6150259AMethod for forming a metal plugUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 21, 2000·12 cites·20 claims
- 1346US5950108AMethod of fabricating a conductive plugUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 7, 1999·15 cites·10 claims
- 1442US5990004AMethod for forming a tungsten plug and a barrier layer in a contact of high aspect ratioUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 23, 1999·10 cites·5 claims
- 1540US6093634AMethod of forming a dielectric layer on a semiconductor waferUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 25, 2000·10 cites·8 claims
- 1640US6030892AMethod of preventing overpolishing in a chemical-mechanical polishing operationUNITED MICROELECTRONICS CORP·Filed 1997·Granted Feb 29, 2000·8 cites·20 claims
- 1740US6013559AMethod of forming trench isolationUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 11, 2000·8 cites·30 claims
- 1837US6136164AApparatus for detecting position of collimator in sputtering processing chamberUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 24, 2000·4 cites·3 claims
- 1937US5883004AMethod of planarization using interlayer dielectricUNITED MICROELECTRONICS CORP·Filed 1997·Granted Mar 16, 1999·8 cites·16 claims
- 2036US6123776AGas delivering apparatus for chemical vapor depositionUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 26, 2000·6 cites·3 claims
- 2135US6093639AProcess for making contact plugUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jul 25, 2000·7 cites·20 claims
- 2234US6657283B2Reducing relative stress between HDP layer and passivation layerUNITED MICROELECTRONICS CORP·Filed 2002·Granted Dec 2, 2003·0 cites·25 claims
- 2332US2001001707A1Treatment on silicon oxynitrideUNITED MICROELECTRONICS CORP·Filed 2001·Application pending·0 cites
- 2430US6426546B1Reducing relative stress between HDP layer and passivation layerUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 30, 2002·3 cites·25 claims
- 2530US6121132AMethod for reducing stress on collimator titanium nitride layerUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 19, 2000·2 cites·9 claims
- 2626US2002013031A1Method of improving the reliability of gate oxide layerFiled 1999·Application pending·0 cites
- 2722US6365062B1Treatment on silicon oxynitrideUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 2, 2002·0 cites·4 claims
- 2822US6235647B1Deposition process for forming void-free dielectric layerUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 22, 2001·0 cites·19 claims
- 2922US6060405AMethod of deposition on waferUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 9, 2000·1 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →