Inventor · disambiguated record
Robert Turkot
Also filed as: TURKOT JR ROBERT B · TURKOT ROBERT · TURKOT ROBERT B · TURKOT ROBERT B JR
13 granted patents·10 pending applications·211 citations·filing 2002–2017
92Inventor score
Top patents by PatentIndex Score
23 records- 0189US6974764B2Method for making a semiconductor device having a metal gate electrodeINTEL CORP·Filed 2003·Granted Dec 13, 2005·42 cites·19 claims
- 0289US6624127B1Highly polar cleans for removal of residues from semiconductor structuresINTEL CORP·Filed 2002·Granted Sep 23, 2003·28 cites·10 claims
- 0387US6812132B2Filling small dimension vias using supercritical carbon dioxideINTEL CORP·Filed 2003·Granted Nov 2, 2004·40 cites·22 claims
- 0486US7022655B2Highly polar cleans for removal of residues from semiconductor structuresINTEL CORP·Filed 2003·Granted Apr 4, 2006·21 cites·5 claims
- 0584US7037845B2Selective etch process for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2003·Granted May 2, 2006·28 cites·17 claims
- 0677US7129182B2Method for etching a thin metal layerINTEL CORP·Filed 2003·Granted Oct 31, 2006·19 cites·25 claims
- 0775US7045428B2Method for making a semiconductor device with a high-k gate dielectric and a conductor that facilitates current flow across a P/N junctionINTEL CORP·Filed 2004·Granted May 16, 2006·20 cites·20 claims
- 0862US7387927B2Reducing oxidation under a high K gate dielectricINTEL CORP·Filed 2004·Granted Jun 17, 2008·8 cites·10 claims
- 0955US8017568B2Cleaning residues from semiconductor structuresINTEL CORP·Filed 2003·Granted Sep 13, 2011·1 cites·4 claims
- 1049US2008211033A1Reducing oxidation under a high K gate dielectricTURKOT ROBERT B·Filed 2008·Application pending·0 cites
- 1148US7056780B2Etching metal silicides and germanidesINTEL CORP·Filed 2003·Granted Jun 6, 2006·1 cites·21 claims
- 1248US2006180874A1Etching metal silicides and germanidesBRASK JUSTIN K·Filed 2006·Application pending·0 cites
- 1347US7233068B2Filling small dimension vias using supercritical carbon dioxideINTEL CORP·Filed 2004·Granted Jun 19, 2007·2 cites·15 claims
- 1446US2014091279A1Non-planar semiconductor device having germanium-based active region with release etch-passivation surfaceKACHIAN JESSICA S·Filed 2012·Application pending·0 cites
- 1545US6896774B2Acoustic streaming of condensate during sputtered metal vapor depositionINTEL CORP·Filed 2003·Granted May 24, 2005·1 cites·15 claims
- 1644US2017005176A1Selective etching for gate all around architecturesSUNG SEUNG HOON·Filed 2013·Application pending·0 cites
- 1741US11515402B2Microelectronic transistor source/drain formation using angled etchingINTEL CORP·Filed 2016·Granted Nov 29, 2022·0 cites·6 claims
- 1838US2020075334A1Colored self-aligned subtractive patterning by asymmetric spacer formationINTEL CORP·Filed 2017·Application pending·0 cites
- 1937US2004079388A1Removing fluorine-based plasma etch residuesFiled 2002·Application pending·0 cites
- 2036US2006102204A1Method for removing a residue from a substrate using supercritical carbon dioxide processingINTEL CORP·Filed 2004·Application pending·0 cites
- 2136US2004077172A1Wet etching narrow trenchesBRASK JUSTIN K·Filed 2002·Application pending·0 cites
- 2232US2004134885A1Etching and cleaning of semiconductors using supercritical carbon dioxideFiled 2003·Application pending·0 cites
- 2332US2020066967A1Damascene-based approaches for fabricating a pedestal for a magnetic tunnel junction (mtj) device and the resulting structuresINTEL CORP·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →