Inventor · disambiguated record
Edward Haywood
Also filed as: HAYWOOD EDWARD · HAYWOOD EDWARD L
29 granted patents·5 pending applications·97 citations·filing 2009–2022
95Inventor score
Top patents by PatentIndex Score
34 records- 0195US8581318B1Enhanced non-noble electrode layers for DRAM capacitor cellINTERMOLECULAR INC·Filed 2013·Granted Nov 12, 2013·21 cites·20 claims
- 0291US11557466B2Tuneable uniformity control utilizing rotational magnetic housingAPPLIED MATERIALS INC·Filed 2020·Granted Jan 17, 2023·2 cites·15 claims
- 0389US8278735B2Yttrium and titanium high-k dielectric filmsHASHIM IMRAN·Filed 2010·Granted Oct 2, 2012·10 cites·22 claims
- 0489US7927947B2Methods for depositing high-K dielectricsINTERMOLECULAR INC·Filed 2009·Granted Apr 19, 2011·10 cites·20 claims
- 0587US8530348B1Integration of non-noble DRAM electrodeMALHOTRA SANDRA G·Filed 2012·Granted Sep 10, 2013·9 cites·16 claims
- 0686US8906160B2Vapor based processing system with purge modeENDO RICHARD·Filed 2010·Granted Dec 9, 2014·5 cites·14 claims
- 0783US8737036B2Titanium based high-K dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted May 27, 2014·4 cites·16 claims
- 0883US7968452B2Titanium-based high-K dielectric filmsINTERMOLECULAR INC·Filed 2009·Granted Jun 28, 2011·6 cites·20 claims
- 0981US8809160B2Methods for forming high-K crystalline films and related devicesCHEN HANHONG·Filed 2011·Granted Aug 19, 2014·4 cites·20 claims
- 1081US8652927B2Integration of non-noble DRAM electrodeINTERMOLECULAR INC·Filed 2013·Granted Feb 18, 2014·5 cites·17 claims
- 1178US8835273B2High temperature ALD process of metal oxide for DRAM applicationsCHEN HANHONG·Filed 2012·Granted Sep 16, 2014·3 cites·18 claims
- 1278US8647943B2Enhanced non-noble electrode layers for DRAM capacitor cellCHEN HANHONG·Filed 2012·Granted Feb 11, 2014·4 cites·19 claims
- 1376US2023139431A1Tuneable uniformity control utilizing rotational magnetic housingAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1475US8901708B2Yttrium and titanium high-k dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted Dec 2, 2014·2 cites·13 claims
- 1575US8541828B2Methods for depositing high-K dielectricsINTERMOLECULAR INC·Filed 2012·Granted Sep 24, 2013·2 cites·18 claims
- 1675US8486727B2System and method for step coverage measurementCHEN HANHONG·Filed 2010·Granted Jul 16, 2013·3 cites·20 claims
- 1774US11587764B2Magnetic housing systemsAPPLIED MATERIALS INC·Filed 2019·Granted Feb 21, 2023·1 cites·12 claims
- 1874US8829647B2High temperature ALD process for metal oxide for DRAM applicationsINTERMOLECULAR INC·Filed 2013·Granted Sep 9, 2014·2 cites·15 claims
- 1973US8551851B2Titanium-based high-K dielectric filmsCHEN HANHONG·Filed 2011·Granted Oct 8, 2013·2 cites·3 claims
- 2068US8563392B2Method of forming an ALD materialMALHOTRA SANDRA·Filed 2011·Granted Oct 22, 2013·2 cites·15 claims
- 2157US8900422B2Yttrium and titanium high-K dielectric filmHASHIM IMRAN·Filed 2009·Granted Dec 2, 2014·0 cites·29 claims
- 2256US8900418B2Yttrium and titanium high-k dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted Dec 2, 2014·0 cites·15 claims
- 2354US8859301B2System and method for step coverage measurementINTERMOLECULAR INC·Filed 2013·Granted Oct 14, 2014·0 cites·8 claims
- 2453US12068153B2Situ clean for bevel and edge ringAPPLIED MATERIALS INC·Filed 2022·Granted Aug 20, 2024·0 cites·8 claims
- 2553US11560626B2Substrate processing chamberAPPLIED MATERIALS INC·Filed 2020·Granted Jan 24, 2023·0 cites·14 claims
- 2653US11270905B2Modulating film properties by optimizing plasma coupling materialsAPPLIED MATERIALS INC·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 2753US11189517B2RF electrostatic chuck filter circuitAPPLIED MATERIALS INC·Filed 2020·Granted Nov 30, 2021·0 cites·21 claims
- 2852US8574985B2Methods for depositing high-K dielectricsRUI XIANGXIN·Filed 2011·Granted Nov 5, 2013·0 cites·17 claims
- 2951US2013069202A1Electrode Treatments for Enhanced DRAM PerformanceINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 3051US2013071991A1Electrode Treatments for Enhanced DRAM PerformanceINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 3149US8530322B2Method of forming stacked metal oxide layersCHEN HANHONG·Filed 2010·Granted Sep 10, 2013·0 cites·12 claims
- 3247US2012235276A1Electrode treatments for enhanced dram performanceRUI XIANGXIN·Filed 2011·Application pending·0 cites
- 3342US9607904B2Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devicesINTERMOLECULAR INC·Filed 2013·Granted Mar 28, 2017·0 cites·20 claims
- 3439US2014166840A1Substrate CarrierINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
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