Inventor · disambiguated record
Hae Chan Park
Also filed as: PARK HAE C · PARK HAE CHAN
59 granted patents·18 pending applications·390 citations·filing 2003–2025
98Inventor score
Files withSK HYNIX INC39HYNIX SEMICONDUCTOR INC11PARK HAE-CHAN10SAMSUNG DISPLAY CO LTD8CHANG HEON Y3
Top patents by PatentIndex Score
77 records- 0198US7332370B2Method of manufacturing a phase change RAM device utilizing reduced phase change currentHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 19, 2008·167 cites·9 claims
- 0294US8351240B2Phase change memory device having multi-level and method of driving the sameSK HYNIX INC·Filed 2009·Granted Jan 8, 2013·22 cites·10 claims
- 0393US10177224B1Semiconductor device and manufacturing method thereofSK HYNIX INC·Filed 2018·Granted Jan 8, 2019·8 cites·20 claims
- 0492US8159869B2Circuit and method for generating reference voltage, phase change random access memory apparatus and read method using the samePARK HAE CHAN·Filed 2009·Granted Apr 17, 2012·29 cites·17 claims
- 0590US8842461B2Phase change memory device having multi-level and method of driving the sameSK HYNIX INC·Filed 2012·Granted Sep 23, 2014·8 cites·18 claims
- 0688US11145594B2Semiconductor device and method of manufacturing the sameSK HYNIX INC·Filed 2019·Granted Oct 12, 2021·4 cites·17 claims
- 0788US7024985B2Coffee extracting apparatus for a coffee machineSAMSUNG KWANGJU ELECTRONICS CO·Filed 2003·Granted Apr 11, 2006·45 cites·16 claims
- 0887US8349636B2Method of manufacturing a phase change memory device using a cross patterning techniqueHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Jan 8, 2013·10 cites·13 claims
- 0986US8445880B2Phase change memory device having bit-line discharge block and method of fabricating the samePARK HAE CHAN·Filed 2009·Granted May 21, 2013·14 cites·20 claims
- 1084US9299428B2Resistive memory apparatus and operation method thereofSK HYNIX INC·Filed 2014·Granted Mar 29, 2016·9 cites·20 claims
- 1182US9484390B2Method for fabricating semiconductor apparatusSK HYNIX INC·Filed 2015·Granted Nov 1, 2016·3 cites·14 claims
- 1282US7667219B2Reduced current phase-change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 23, 2010·11 cites·8 claims
- 1380US10373971B2Manufacturing method of semiconductor deviceSK HYNIX INC·Filed 2017·Granted Aug 6, 2019·3 cites·12 claims
- 1480US9818481B2Resistive memory device and operation method thereofSK HYNIX INC·Filed 2017·Granted Nov 14, 2017·4 cites·4 claims
- 1579US9613690B2Resistive memory device and operation method thereofSK HYNIX INC·Filed 2013·Granted Apr 4, 2017·5 cites·13 claims
- 1677US8440991B2Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the samePARK HAE CHAN·Filed 2009·Granted May 14, 2013·7 cites·15 claims
- 1773US8498147B2Nonvolatile memory cell, nonvolatile memory device and method for driving the samePARK HAE-CHAN·Filed 2012·Granted Jul 30, 2013·3 cites·4 claims
- 1871US9142291B2High voltage generating circuit for resistive memory apparatusSK HYNIX INC·Filed 2013·Granted Sep 22, 2015·3 cites·12 claims
- 1971US9087575B2Phase change memory device having multi-level and method of driving the sameSK HYNIX INC·Filed 2014·Granted Jul 21, 2015·2 cites·7 claims
- 2070US9196659B2Method for fabricating an electronic device with anti-oxidation layersSK HYNIX INC·Filed 2014·Granted Nov 24, 2015·2 cites·7 claims
- 2168US11823999B2Semiconductor device and method of manufacturing the sameSK HYNIX INC·Filed 2021·Granted Nov 21, 2023·0 cites·12 claims
- 2268US7799596B2Phase change memory device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Sep 21, 2010·3 cites·2 claims
- 2367US8885402B2Semiconductor integrated circuit system and method for driving the sameSK HYNIX INC·Filed 2014·Granted Nov 11, 2014·2 cites·9 claims
- 2467US8289761B2Nonvolatile memory cell, nonvolatile memory device and method for driving the samePARK HAE-CHAN·Filed 2009·Granted Oct 16, 2012·4 cites·12 claims
- 2567US2025240956A1Semiconductor memory deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2666US9601691B2Semiconductor apparatus and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Mar 21, 2017·1 cites·9 claims
- 2766US9142464B1Method for fabricating semiconductor apparatusSK HYNIX INC·Filed 2014·Granted Sep 22, 2015·1 cites·15 claims
- 2865US9502646B2Semiconductor integrated circuit device having encapsulation film and method of fabricating the sameSK HYNIX INC·Filed 2015·Granted Nov 22, 2016·1 cites·17 claims
- 2965US8780621B2Semiconductor integrated circuit system and method for driving the samePARK HAE CHAN·Filed 2011·Granted Jul 15, 2014·2 cites·7 claims
- 3064US7851776B2Phase change RAM deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Dec 14, 2010·2 cites·4 claims
- 3163US9236121B2Semiconductor memory apparatus and temperature control method thereofSK HYNIX INC·Filed 2014·Granted Jan 12, 2016·2 cites·19 claims
- 3263US9159377B2Resistive memory apparatus, operating method thereof, and system having the sameSK HYNIX INC·Filed 2013·Granted Oct 13, 2015·2 cites·22 claims
- 3363US8879313B2Semiconductor integrated circuit system and method for driving the sameSK HYNIX INC·Filed 2014·Granted Nov 4, 2014·2 cites·5 claims
- 3462US8982605B2Phase change memory device having multi-level and method of driving the sameSK HYNIX INC·Filed 2014·Granted Mar 17, 2015·1 cites·8 claims
- 3562US8008167B2Phase change memory device having an increased sensing margin for cell efficiency and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Aug 30, 2011·2 cites·10 claims
- 3662US2025204230A1Light emitting display deviceSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 3762US2025255159A1Light emitting display deviceSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 3861US7885100B2Phase change random access memory and layout method of the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Feb 8, 2011·4 cites·40 claims
- 3958US2025393432A1Light emitting display device and electronic apparatusSAMSUNG DISPLAY CO LTD·Filed 2025·Application pending·0 cites
- 4056US10566419B2Semiconductor device and manufacturing method thereofSK HYNIX INC·Filed 2018·Granted Feb 18, 2020·0 cites·20 claims
- 4156US9312305B2Phase-change memory device having multiple diodesSK HYNIX INC·Filed 2014·Granted Apr 12, 2016·0 cites·3 claims
- 4255US11065662B2Press forming method for compound materialOHSUNG DISPLAY CO LTD·Filed 2018·Granted Jul 20, 2021·0 cites·10 claims
- 4355US8710480B2Phase-change memory device having multiple diodesSK HYNIX INC·Filed 2013·Granted Apr 29, 2014·0 cites·6 claims
- 4453US10734407B2Manufacturing method of semiconductor deviceSK HYNIX INC·Filed 2019·Granted Aug 4, 2020·0 cites·10 claims
- 4553US8450772B2Phase change RAM device and method for manufacturing the sameCHANG HEON YONG·Filed 2009·Granted May 28, 2013·0 cites·5 claims
- 4652US8524523B2Square pillar-shaped switching element for memory device and method of manufacturing the samePARK HAE CHAN·Filed 2009·Granted Sep 3, 2013·2 cites·11 claims
- 4751US12366684B2Tiled display deviceSAMSUNG DISPLAY CO LTD·Filed 2021·Granted Jul 22, 2025·0 cites·20 claims
- 4851US8982606B2Phase change memory device having multi-level and method of driving the sameSK HYNIX INC·Filed 2014·Granted Mar 17, 2015·0 cites·5 claims
- 4951US2023143745A1Light emitting display deviceSAMSUNG DISPLAY CO LTD·Filed 2022·Application pending·0 cites
- 5051US2010327251A1Phase change memory device having partially confined heating electrodes capable of reducing heating disturbances between adjacent memory cellsHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
Showing the top 50 of 77 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →