Inventor · disambiguated record
Ji-Cheng Chen
Also filed as: CHEN JI-CHENG
20 granted patents·8 pending applications·25 citations·filing 2016–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD28
Top patents by PatentIndex Score
28 records- 0198US11411079B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·4 cites·20 claims
- 0298US11302793B2Transistor gates and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·6 cites·20 claims
- 0397US11923414B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 0496US11916124B2Transistor gates and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·19 claims
- 0594US11444198B2Work function control in gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 0692US12132112B2Work function control in gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·1 cites·20 claims
- 0786US12283609B2Gate structure of transistor including a plurality of work function layers and oxygen device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 0885US12170280B2Method of manufacturing gate structure and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 0985US2025294809A1Transistor gates and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1084US12349410B2Nanostructure field-effect transistor (NANO-FET) with gates including a seam in p-type work function metal between nanostructures and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1184US11270994B2Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 8, 2022·2 cites·20 claims
- 1281US2024088144A1Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1381US2025220993A1Gate structure of transistor including a plurality of work function layers and oxygen device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1480US10644153B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 5, 2020·3 cites·20 claims
- 1579US2025338585A1Work-Function Layers in the Gates of pFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1679US2024355880A1Methods of Forming Semiconductor Devices Including Gate Barrier LayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1778US12051721B2Methods of forming semiconductor devices including gate barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 1878US11855083B2Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·13 claims
- 1978US2024297080A1Adjusting Work Function Through Adjusting Deposition TemperatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2077US2025311333A1Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2176US12009264B2Adjusting work function through adjusting deposition temperatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 2276US11075275B2Metal gate fill for short-channel and long-channel semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·2 cites·20 claims
- 2372US12426321B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2469US12453153B2Work-function layers in the gates of pFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 2569US11495661B2Semiconductor device including gate barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 2667US11362002B2Adjusting work function through adjusting deposition temperatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 2763US11171235B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·20 claims
- 2860US2025372365A1Methods of widening threshold voltage tuning range for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Ji-Cheng Chen files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →