Inventor · disambiguated record
Han-Sin Lee
Also filed as: LEE HAN C · LEE HAN SIN
13 granted patents·4 pending applications·519 citations·filing 1996–2021
93Inventor score
Top patents by PatentIndex Score
17 records- 0197US6107143AMethod for forming a trench isolation structure in an integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 22, 2000·287 cites·14 claims
- 0288US6331469B1Trench isolation structure, semiconductor device having the same, and trench isolation methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 18, 2001·43 cites·20 claims
- 0385US6465866B2Trench isolation regions having trench liners with recessed endsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 15, 2002·34 cites·10 claims
- 0477US7947540B2Multi-level semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 24, 2011·6 cites·5 claims
- 0573US6436611B1Trench isolation method for semiconductor integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 20, 2002·21 cites·14 claims
- 0671US6121110ATrench isolation method for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 19, 2000·40 cites·28 claims
- 0769US6537914B1Integrated circuit device isolation methods using high selectivity chemical-mechanical polishingSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 25, 2003·12 cites·12 claims
- 0865US8148765B2Resistive random access memorySHIM HYUN-JUN·Filed 2009·Granted Apr 3, 2012·8 cites·7 claims
- 0963US5858858AAnnealing methods for forming isolation trenchesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jan 12, 1999·28 cites·23 claims
- 1056US6875670B2Trench isolation methodSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 5, 2005·7 cites·12 claims
- 1156US2023148589A1Composition for protecting islet transplantationLG CHEMICAL LTD·Filed 2021·Application pending·0 cites
- 1255US6083808AMethod for forming a trench isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 4, 2000·19 cites·13 claims
- 1347US6855590B2Method of manufacturing the semiconductor device intended to prevent a leakage current from occuring due to a gate induced drain leakage effectSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 15, 2005·1 cites·11 claims
- 1446US6258726B1Method of forming isolation film for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 10, 2001·13 cites·12 claims
- 1544US2005151173A1Semiconductor device and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 1637US2007077740A1Methods of fabricating fully silicide gate and semiconductor memory device having the sameLEE HAN C·Filed 2005·Application pending·0 cites
- 1737US2007077756A1Methods of fabricating a fully silicided gate and semiconductor memory device having the sameLEE HAN C·Filed 2005·Application pending·0 cites
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