Inventor · disambiguated record
Vitali Soukhoveev
Also filed as: SOUKHOVEEV VITALI · SOUKHOVEEV VITALI A
16 granted patents·6 pending applications·420 citations·filing 2001–2014
94Inventor score
Files withTECHNOLOGIES AND DEVICES INTER9DMITRIEV VLADIMIR A4FREIBERGER COMPOUND MAT GMBH3OSTENDO TECHNOLOGIES INC3MELNIK YURI V1
Top patents by PatentIndex Score
22 records- 0197US6936357B2Bulk GaN and ALGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Aug 30, 2005·80 cites·17 claims
- 0296US6613143B1Method for fabricating bulk GaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 2, 2003·85 cites·27 claims
- 0395US6616757B1Method for achieving low defect density GaN single crystal boulesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 9, 2003·61 cites·27 claims
- 0495US6576054B1Method for fabricating bulk AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Jun 10, 2003·49 cites·31 claims
- 0593US7279047B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Oct 9, 2007·36 cites·29 claims
- 0693US6656285B1Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Dec 2, 2003·47 cites·18 claims
- 0792US8992684B1Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materialsOSTENDO TECHNOLOGIES INC·Filed 2013·Granted Mar 31, 2015·7 cites·10 claims
- 0890US7556688B2Method for achieving low defect density AlGaN single crystal boulesFREIBERGER COMPOUND MAT GMBH·Filed 2005·Granted Jul 7, 2009·15 cites·37 claims
- 0986US9023673B1Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusionsOSTENDO TECHNOLOGIES INC·Filed 2013·Granted May 5, 2015·8 cites·13 claims
- 1085US8647435B1HVPE apparatus and methods for growth of p-type single crystal group III nitride materialsDMITRIEV VLADIMIR A·Filed 2007·Granted Feb 11, 2014·11 cites·12 claims
- 1185US7611586B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Nov 3, 2009·12 cites·10 claims
- 1273US9416464B1Apparatus and methods for controlling gas flows in a HVPE reactorDMITRIEV VLADIMIR A·Filed 2007·Granted Aug 16, 2016·4 cites·15 claims
- 1373US8629065B2Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)SPIBERG PHILIPPE·Filed 2009·Granted Jan 14, 2014·4 cites·1 claims
- 1464US9443727B2Semi-polar III-nitride films and materials and method for making the sameOSTENDO TECHNOLOGIES INC·Filed 2014·Granted Sep 13, 2016·1 cites·20 claims
- 1564US8372199B2Bulk GaN and AlGaN single crystalsFREIBERGER COMPOUND MAT GMBH·Filed 2008·Granted Feb 12, 2013·0 cites·2 claims
- 1658US8092596B2Bulk GaN and AlGaN single crystalsMELNIK YURI V·Filed 2008·Granted Jan 10, 2012·0 cites·10 claims
- 1757US2005164044A1Bulk GaN and AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 1857US2005244997A1Bulk GaN and AIGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 1953US2009286331A2Method for simulatenously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown therebyFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 2046US2007032046A1Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown therebyDMITRIEV VLADIMIR A·Filed 2005·Application pending·0 cites
- 2142US2006011135A1HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth runDMITRIEV VLADIMIR A·Filed 2005·Application pending·0 cites
- 2239US2003205193A1Method for achieving low defect density aigan single crystal boulesFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →