Inventor · disambiguated record
Yuri V. Melnik
Also filed as: MELNIK YURI · MELNIK YURI V
19 granted patents·8 pending applications·1,158 citations·filing 1998–2011
96Inventor score
Files withTECHNOLOGIES AND DEVICES INTER14FREIBERGER COMPOUND MAT GMBH3DMITRIEV VLADIMIR A2MELNIK YURI V1NANO SIZE LTD1
Top patents by PatentIndex Score
27 records- 0197US8092597B2Method and apparatus for fabricating crack-free Group III nitride semiconductor materialsDMITRIEV VLADIMIR A·Filed 2011·Granted Jan 10, 2012·16 cites·19 claims
- 0297US7501023B2Method and apparatus for fabricating crack-free Group III nitride semiconductor materialsTECHNOLOGIES AND DEVICES INTER·Filed 2004·Granted Mar 10, 2009·57 cites·50 claims
- 0397US6936357B2Bulk GaN and ALGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Aug 30, 2005·80 cites·17 claims
- 0496US6613143B1Method for fabricating bulk GaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 2, 2003·85 cites·27 claims
- 0595US6616757B1Method for achieving low defect density GaN single crystal boulesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 9, 2003·61 cites·27 claims
- 0695US6576054B1Method for fabricating bulk AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Jun 10, 2003·49 cites·31 claims
- 0793US7279047B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Oct 9, 2007·36 cites·29 claims
- 0893US6656285B1Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Dec 2, 2003·47 cites·18 claims
- 0992US7157058B2High power ultrasonic reactor for sonochemical applicationsNANO SIZE LTD·Filed 2004·Granted Jan 2, 2007·425 cites·11 claims
- 1091US6479839B2III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layerTECHNOLOGIES & DEVICES INTERNA·Filed 2001·Granted Nov 12, 2002·99 cites·51 claims
- 1190US7556688B2Method for achieving low defect density AlGaN single crystal boulesFREIBERGER COMPOUND MAT GMBH·Filed 2005·Granted Jul 7, 2009·15 cites·37 claims
- 1288US6955719B2Manufacturing methods for semiconductor devices with multiple III-V material layersTECHNOLOGIES AND DEVICES INC·Filed 2003·Granted Oct 18, 2005·52 cites·34 claims
- 1385US7611586B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Nov 3, 2009·12 cites·10 claims
- 1483US6849862B2III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layerTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Feb 1, 2005·33 cites·51 claims
- 1575US6559467B2P-n heterojunction-based structures utilizing HVPE grown III-V compound layersTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted May 6, 2003·19 cites·33 claims
- 1675US6218269B1Process for producing III-V nitride pn junctions and p-i-n junctionsTECHNOLOGY AND DEVICES INTERNA·Filed 1998·Granted Apr 17, 2001·54 cites·12 claims
- 1773US6559038B2Method for growing p-n heterojunction-based structures utilizing HVPE techniquesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted May 6, 2003·18 cites·36 claims
- 1867US2012076968A1Method and apparatus for fabricating crack-free group iii nitride semiconductor materialsDMITRIEV VLADIMIR A·Filed 2011·Application pending·0 cites
- 1964US8372199B2Bulk GaN and AlGaN single crystalsFREIBERGER COMPOUND MAT GMBH·Filed 2008·Granted Feb 12, 2013·0 cites·2 claims
- 2064US2009286063A2Method and apparatus for fabricating crack-free group iii nitride semiconductor materialsFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 2160US2006280668A1Method and apparatus for fabricating crack-free group III nitride semiconductor materialsTECHNOLOGIES AND DEVICES INTER·Filed 2006·Application pending·0 cites
- 2258US8092596B2Bulk GaN and AlGaN single crystalsMELNIK YURI V·Filed 2008·Granted Jan 10, 2012·0 cites·10 claims
- 2357US2005164044A1Bulk GaN and AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 2457US2005244997A1Bulk GaN and AIGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 2539US2003205193A1Method for achieving low defect density aigan single crystal boulesFiled 2001·Application pending·0 cites
- 2635US2002047135A1P-N junction-based structures utilizing HVPE grown III-V compound layersFiled 2001·Application pending·0 cites
- 2735US2002017650A1III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layerTECHNOLOGIES & DEVICES·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →