Inventor · disambiguated record
Leonardo Ravazzi
Also filed as: RAVAZZI LEONARDO
10 granted patents·291 citations·filing 1995–2000
90Inventor score
Top patents by PatentIndex Score
10 records- 0194US5712814ANonvolatile memory cell and a method for forming the sameSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jan 27, 1998·132 cites·21 claims
- 0286US5920776AMethod of making asymmetric nonvolatile memory cellSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Jul 6, 1999·60 cites·16 claims
- 0368US5793675AMethod of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1997·Granted Aug 11, 1998·24 cites·15 claims
- 0464US5712816AMethod for evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1996·Granted Jan 27, 1998·40 cites·44 claims
- 0548US5515318AMethod of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1995·Granted May 7, 1996·10 cites·18 claims
- 0644US5604699AMethod of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1995·Granted Feb 18, 1997·8 cites·30 claims
- 0742US6507067B1Flash EEPROM with integrated device for limiting the erase source voltageST MICROELECTRONICS SRL·Filed 1996·Granted Jan 14, 2003·8 cites·11 claims
- 0841US6067250AMethod and apparatus for localizing point defects causing leakage currents in a non-volatile memory deviceST MICROELECTRONICS SRL·Filed 1999·Granted May 23, 2000·8 cites·6 claims
- 0930US6369406B1Method for localizing point defects causing leakage currents in a non-volatile memory deviceST MICROELECTRONICS SRL·Filed 1999·Granted Apr 9, 2002·1 cites·10 claims
- 1020US6362053B1Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxideST MICROELECTRONICS SRL·Filed 2000·Granted Mar 26, 2002·0 cites·16 claims
Join the waitlist — get patent alerts
Get an alert when Leonardo Ravazzi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →