Inventor · disambiguated record
Michael P. Belyansky
Also filed as: BELYANSKY MICHAEL · BELYANSKY MICHAEL P
58 granted patents·20 pending applications·637 citations·filing 2001–2024
98Inventor score
Top patents by PatentIndex Score
78 records- 0198US6977194B2Structure and method to improve channel mobility by gate electrode stress modificationIBM·Filed 2003·Granted Dec 20, 2005·225 cites·5 claims
- 0296US9929012B1Resist having tuned interface hardmask layer for EUV exposureIBM·Filed 2016·Granted Mar 27, 2018·20 cites·18 claims
- 0394US10249730B1Controlling gate profile by inter-layer dielectric (ILD) nanolaminatesIBM·Filed 2017·Granted Apr 2, 2019·11 cites·15 claims
- 0494US9397002B1Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxideIBM·Filed 2015·Granted Jul 19, 2016·9 cites·10 claims
- 0593US7585704B2Method of producing highly strained PECVD silicon nitride thin films at low temperatureIBM·Filed 2005·Granted Sep 8, 2009·28 cites·23 claims
- 0691US10741663B1Encapsulation layer for vertical transport field-effect transistor gate stackIBM·Filed 2019·Granted Aug 11, 2020·6 cites·20 claims
- 0791US10388766B2Vertical transport FET (VFET) with dual top spacerIBM·Filed 2017·Granted Aug 20, 2019·6 cites·12 claims
- 0890US10170582B1Uniform bottom spacer for vertical field effect transistorIBM·Filed 2017·Granted Jan 1, 2019·6 cites·17 claims
- 0990US6869860B2Filling high aspect ratio isolation structures with polysilazane based materialIBM·Filed 2003·Granted Mar 22, 2005·35 cites·10 claims
- 1089US7691701B1Method of forming gate stack and structure thereofIBM·Filed 2009·Granted Apr 6, 2010·16 cites·27 claims
- 1188US7202516B2CMOS transistor structure including film having reduced stress by exposure to atomic oxygenIBM·Filed 2005·Granted Apr 10, 2007·12 cites·9 claims
- 1288US6562713B1Method of protecting semiconductor areas while exposing a gateIBM·Filed 2002·Granted May 13, 2003·42 cites·10 claims
- 1386US7659160B2Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication sameIBM·Filed 2007·Granted Feb 9, 2010·12 cites·10 claims
- 1485US7273638B2High density plasma oxidationINFINEON TECHNOLOGIES CORP·Filed 2003·Granted Sep 25, 2007·41 cites·19 claims
- 1585US7271049B2Method of forming self-aligned low-k gate capIBM·Filed 2006·Granted Sep 18, 2007·10 cites·9 claims
- 1684US10672910B2Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT)IBM·Filed 2018·Granted Jun 2, 2020·3 cites·9 claims
- 1784US6982196B2Oxidation method for altering a film structure and CMOS transistor structure formed therewithIBM·Filed 2003·Granted Jan 3, 2006·27 cites·13 claims
- 1883US10665512B2Stress modulation of nFET and pFET fin structuresIBM·Filed 2018·Granted May 26, 2020·3 cites·14 claims
- 1981US11222820B2Self-aligned gate cap including an etch-stop layerIBM·Filed 2018·Granted Jan 11, 2022·2 cites·9 claims
- 2081US10957781B2Uniform horizontal spacerIBM·Filed 2018·Granted Mar 23, 2021·2 cites·17 claims
- 2180US10832973B2Stress modulation of nFET and pFET fin structuresIBM·Filed 2020·Granted Nov 10, 2020·1 cites·20 claims
- 2280US9613956B1Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxideIBM·Filed 2016·Granted Apr 4, 2017·2 cites·20 claims
- 2377US6890833B2Trench isolation employing a doped oxide trench fillIBM·Filed 2003·Granted May 10, 2005·25 cites·15 claims
- 2476US7648871B2Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating sameIBM·Filed 2005·Granted Jan 19, 2010·6 cites·20 claims
- 2574US8557649B2Method for controlling structure heightVENIGALLA RAJASEKHAR·Filed 2011·Granted Oct 15, 2013·4 cites·5 claims
- 2673US10535550B2Protection of low temperature isolation fillIBM·Filed 2017·Granted Jan 14, 2020·1 cites·10 claims
- 2773US6642147B2Method of making thermally stable planarizing filmsIBM·Filed 2001·Granted Nov 4, 2003·15 cites·20 claims
- 2872US11049858B2Vertical fin field effect transistor devices with a replacement metal gateIBM·Filed 2020·Granted Jun 29, 2021·0 cites·20 claims
- 2972US11004850B2Vertical fin field effect transistor devices with a replacement metal gateIBM·Filed 2020·Granted May 11, 2021·0 cites·20 claims
- 3071US11107814B2Vertical fin field effect transistor devices with a replacement metal gateIBM·Filed 2020·Granted Aug 31, 2021·0 cites·20 claims
- 3170US7230296B2Self-aligned low-k gate capIBM·Filed 2004·Granted Jun 12, 2007·12 cites·16 claims
- 3269US6914015B2HDP process for high aspect ratio gap fillingIBM·Filed 2003·Granted Jul 5, 2005·14 cites·23 claims
- 3368US11715783B2Uniform horizontal spacerIBM·Filed 2020·Granted Aug 1, 2023·0 cites·18 claims
- 3465US11282962B2Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT)IBM·Filed 2020·Granted Mar 22, 2022·0 cites·13 claims
- 3565US7750410B2Structure and method to improve channel mobility by gate electrode stress modificationIBM·Filed 2005·Granted Jul 6, 2010·2 cites·7 claims
- 3665US7205206B2Method of fabricating mobility enhanced CMOS devicesIBM·Filed 2004·Granted Apr 17, 2007·9 cites·41 claims
- 3764US12300615B2Infrared debond damage mitigation by copper fill patternIBM·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 3864US7488658B2Stressed semiconductor device structures having granular semiconductor materialIBM·Filed 2006·Granted Feb 10, 2009·1 cites·8 claims
- 3964US7122849B2Stressed semiconductor device structures having granular semiconductor materialIBM·Filed 2003·Granted Oct 17, 2006·7 cites·7 claims
- 4063US10679993B2Vertical fin field effect transistor devices with a replacement metal gateIBM·Filed 2018·Granted Jun 9, 2020·0 cites·9 claims
- 4162US7863646B2Dual oxide stress linerIBM·Filed 2007·Granted Jan 4, 2011·2 cites·5 claims
- 4261US7342266B2Field effect transistors with dielectric source drain halo regions and reduced miller capacitanceIBM·Filed 2006·Granted Mar 11, 2008·5 cites·6 claims
- 4360US11908723B2Silicon handler with laser-release layersIBM·Filed 2021·Granted Feb 20, 2024·0 cites·24 claims
- 4460US7741166B2Oxidation method for altering a film structureIBM·Filed 2005·Granted Jun 22, 2010·1 cites·15 claims
- 4560US7081393B2Reduced dielectric constant spacer materials integration for high speed logic gatesIBM·Filed 2004·Granted Jul 25, 2006·8 cites·20 claims
- 4659US11257716B2Self-aligned gate cap including an etch-stop layerIBM·Filed 2019·Granted Feb 22, 2022·0 cites·9 claims
- 4759US11011624B2Vertical transport field-effect transistor (VFET) with dual top spacerIBM·Filed 2019·Granted May 18, 2021·0 cites·19 claims
- 4859US10141188B2Resist having tuned interface hardmask layer for EUV exposureIBM·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
- 4959US10134592B2Resist having tuned interface hardmask layer for EUV exposureIBM·Filed 2017·Granted Nov 20, 2018·0 cites·20 claims
- 5059US7569848B2Mobility enhanced CMOS devicesIBM·Filed 2006·Granted Aug 4, 2009·1 cites·5 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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