Inventor · disambiguated record
Majid Mansoori
Also filed as: MANSOORI MAJID · MANSOORI MAJID M · MANSOORI MAJID MOVAHED
9 granted patents·4 pending applications·135 citations·filing 2003–2008
87Inventor score
Files withTEXAS INSTRUMENTS INC13
Top patents by PatentIndex Score
13 records- 0189US7892931B2Use of a single mask during the formation of a transistor's drain extension and recessed strained epi regionsTEXAS INSTRUMENTS INC·Filed 2006·Granted Feb 22, 2011·19 cites·30 claims
- 0289US6872610B1Method for preventing polysilicon mushrooming during selective epitaxial processingTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 29, 2005·57 cites·20 claims
- 0379US6787425B1Methods for fabricating transistor gate structuresTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 7, 2004·27 cites·15 claims
- 0476US6830980B2Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regionsTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 14, 2004·22 cites·38 claims
- 0554US6828213B2Method to improve STI nano gap fill and moat nitride pull backTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 7, 2004·6 cites·9 claims
- 0650US7344951B2Surface preparation method for selective and non-selective epitaxial growthTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 18, 2008·3 cites·27 claims
- 0749US2007166906A1Method to Reduce Transistor Gate to Source/Drain Overlap Capacitance by Incorporation of CarbonTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 0848US7427543B2Method to improve drive current by increasing the effective area of an electrodeTEXAS INSTRUMENTS INC·Filed 2006·Granted Sep 23, 2008·0 cites·6 claims
- 0946US7199011B2Method to reduce transistor gate to source/drain overlap capacitance by incorporation of carbonTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 3, 2007·1 cites·19 claims
- 1044US2010155860A1Two step method to create a gate electrode using a physical vapor deposited layer and a chemical vapor deposited layerTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1140US2008283936A1Silicon germanium flow with raised source/drain regions in the nmosTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 1239US7109556B2Method to improve drive current by increasing the effective area of an electrodeTEXAS INSTRUMENTS INC·Filed 2004·Granted Sep 19, 2006·0 cites·11 claims
- 1334US2005090082A1Method and system for improving performance of MOSFETsTEXAS INSTRUMENTS INC·Filed 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →