Inventor · disambiguated record
Borna J. Obradovic
Also filed as: OBRADOVIC BORNA · OBRADOVIC BORNA J · OBRADOVIC BORNA JOSIP
82 granted patents·8 pending applications·604 citations·filing 2002–2024
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD62TEXAS INSTRUMENTS INC9OBRADOVIC BORNA J5INTEL CORP3KITTL JORGE A2
Top patents by PatentIndex Score
90 records- 0198US10026652B2Horizontal nanosheet FETs and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·21 cites·13 claims
- 0298US9853114B1Field effect transistor with stacked nanowire-like channels and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 26, 2017·24 cites·20 claims
- 0398US9812449B2Multi-VT gate stack for III-V nanosheet devices with reduced parasitic capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 7, 2017·30 cites·20 claims
- 0498US9711414B2Strained stacked nanosheet FETS and/or quantum well stacked nanosheetSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 18, 2017·32 cites·30 claims
- 0598US9647098B2Thermionically-overdriven tunnel FETs and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 9, 2017·42 cites·24 claims
- 0698US9490323B2Nanosheet FETs with stacked nanosheets having smaller horizontal spacing than vertical spacing for large effective widthSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 8, 2016·37 cites·18 claims
- 0798US9461114B2Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the sameOBRADOVIC BORNA J·Filed 2015·Granted Oct 4, 2016·43 cites·20 claims
- 0897US9741811B2Integrated circuit devices including source/drain extension regions and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 22, 2017·21 cites·10 claims
- 0997US9570609B2Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the sameOBRADOVIC BORNA J·Filed 2015·Granted Feb 14, 2017·56 cites·20 claims
- 1097US9287357B2Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 15, 2016·66 cites·20 claims
- 1196US9466669B2Multiple channel length finFETs with same physical gate lengthSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 11, 2016·16 cites·9 claims
- 1295US11983622B2High-density neuromorphic computing elementSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 14, 2024·1 cites·15 claims
- 1395US9905672B2Method of forming internal dielectric spacers for horizontal nanosheet FET architecturesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 27, 2018·14 cites·19 claims
- 1494US10878317B2Method and system for performing analog complex vector-matrix multiplicationSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 29, 2020·13 cites·19 claims
- 1594US9484423B2Crystalline multiple-nanosheet III-V channel FETsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 1, 2016·16 cites·17 claims
- 1693US9653287B2S/D connection to individual channel layers in a nanosheet FETSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·11 cites·16 claims
- 1792US10566330B2Dielectric separation of partial GAA FETsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 18, 2020·10 cites·20 claims
- 1892US10164121B2Stacked independently contacted field effect transistor having electrically separated first and second gatesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 25, 2018·8 cites·8 claims
- 1992US9960232B2Horizontal nanosheet FETs and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 1, 2018·7 cites·13 claims
- 2092US9831323B2Structure and method to achieve compressively strained Si NSSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 28, 2017·8 cites·20 claims
- 2192US9793403B2Multi-layer fin field effect transistor devices and methods of forming the sameOBRADOVIC BORNA J·Filed 2016·Granted Oct 17, 2017·9 cites·20 claims
- 2289US9899529B2Method to make self-aligned vertical field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 20, 2018·5 cites·18 claims
- 2389US9178045B2Integrated circuit devices including FinFETS and methods of forming the sameOBRADOVIC BORNA J·Filed 2014·Granted Nov 3, 2015·9 cites·22 claims
- 2488US9870940B2Methods of forming nanosheets on lattice mismatched substratesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·5 cites·20 claims
- 2586US12333422B2High-density neuromorphic computing elementSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 2685US10199474B2Field effect transistor with decoupled channel and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 5, 2019·3 cites·20 claims
- 2785US10170549B2Strained stacked nanosheet FETs and/or quantum well stacked nanosheetSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 1, 2019·4 cites·33 claims
- 2884US11461620B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 4, 2022·5 cites·14 claims
- 2984US10909449B2Monolithic multi-bit weight cell for neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 2, 2021·3 cites·20 claims
- 3084US10586738B2Method of providing source and drain doping for CMOS architecture including FinFET and semiconductor devices so formedSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 10, 2020·3 cites·24 claims
- 3184US10026751B2Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·4 cites·17 claims
- 3283US10585630B2Selectorless 3D stackable memorySAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 10, 2020·3 cites·16 claims
- 3383US9013167B2Hall effect device having voltage based biasing for temperature compensationANTONACCI ANTHONY G·Filed 2010·Granted Apr 21, 2015·10 cites·12 claims
- 3482US7718482B2CD gate bias reduction and differential N+ poly doping for CMOS circuitsTEXAS INSTRUMENTS INC·Filed 2007·Granted May 18, 2010·9 cites·15 claims
- 3580US10446400B2Method of forming multi-threshold voltage devices and devices so formedSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 15, 2019·2 cites·15 claims
- 3680US10312152B2Field effect transistor with stacked nanowire-like channels and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·2 cites·20 claims
- 3780US7537988B2Differential offset spacerTEXAS INSTRUMENTS INC·Filed 2007·Granted May 26, 2009·8 cites·20 claims
- 3877US7812401B2MOS device and process having low resistance silicide interface using additional source/drain implantTEXAS INSTRUMENTS INC·Filed 2010·Granted Oct 12, 2010·3 cites·8 claims
- 3977US7727838B2Method to improve transistor Tox using high-angle implants with no additional masksTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 1, 2010·5 cites·33 claims
- 4076US10679688B2Ferroelectric-based memory cell usable in on-logic chip memorySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 9, 2020·3 cites·20 claims
- 4175US11476121B2Method of forming multi-threshold voltage devices and devices so formedSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 18, 2022·1 cites·17 claims
- 4275US10381271B2Field effect transistor with stacked nanowire-like channels and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 13, 2019·1 cites·22 claims
- 4374US10497719B2Method for selectively increasing silicon fin area for vertical field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 3, 2019·1 cites·10 claims
- 4474US9805795B2Zero leakage, high noise margin coupled giant spin hall based retention latchSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·2 cites·19 claims
- 4573US10930768B2Low current leakage finFET and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·1 cites·21 claims
- 4673US7682892B2MOS device and process having low resistance silicide interface using additional source/drain implantTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 23, 2010·3 cites·13 claims
- 4772US11727258B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·18 claims
- 4871US11586901B2High-density neuromorphic computing elementSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·5 claims
- 4970US10008580B2FET including an InGaAs channel and method of enhancing performance of the FETSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·1 cites·13 claims
- 5069US10964698B2Field effect transistor with decoupled channel and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 30, 2021·0 cites·20 claims
Showing the top 50 of 90 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →