Inventor · disambiguated record
Isao Miyanaga
Also filed as: MIYANAGA ISAO
24 granted patents·2 pending applications·665 citations·filing 1993–2010
97Inventor score
Top patents by PatentIndex Score
26 records- 0197US5945834ASemiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Aug 31, 1999·160 cites·7 claims
- 0296US6005401ASemiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Dec 21, 1999·140 cites·8 claims
- 0384US6800512B1Method of forming insulating film and method of fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 5, 2004·26 cites·9 claims
- 0480US6323663B1Semiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 27, 2001·37 cites·7 claims
- 0580US5843844AProbe sheet and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Dec 1, 1998·61 cites·14 claims
- 0675US7126174B2Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 24, 2006·13 cites·20 claims
- 0771US6281562B1Semiconductor device which reduces the minimum distance requirements between active areasMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Aug 28, 2001·28 cites·12 claims
- 0870US5825193ASemiconductor integrated circuit deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 20, 1998·32 cites·4 claims
- 0969US5693557AMethod of fabricating a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Dec 2, 1997·29 cites·4 claims
- 1067US5451799AMOS transistor for protection against electrostatic dischargeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Sep 19, 1995·27 cites·9 claims
- 1161US7033874B2Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 25, 2006·6 cites·4 claims
- 1258US5474949AMethod of fabricating capacitor or contact for semiconductor device by forming uneven oxide film and reacting silicon with metal containing gasMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Dec 12, 1995·22 cites·6 claims
- 1355US7495295B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2005·Granted Feb 24, 2009·1 cites·5 claims
- 1455US5675168AUnsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 7, 1997·16 cites·5 claims
- 1553US6967409B2Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 22, 2005·3 cites·81 claims
- 1652US5514893ASemiconductor device for protecting an internal circuit from electrostatic damageMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted May 7, 1996·14 cites·35 claims
- 1752US5418187AMethod for extending electrically conductive layer into electrically insulating layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted May 23, 1995·20 cites·70 claims
- 1849US6709950B2Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 23, 2004·2 cites·22 claims
- 1949US5892368ASemiconductor integrated circuit device having failure detection circuitryMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 6, 1999·12 cites·1 claims
- 2049US2005156220A1Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
- 2148US7709911B2Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the samePANASONIC CORP·Filed 2006·Granted May 4, 2010·0 cites·12 claims
- 2248US6890824B2Semiconductor device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 10, 2005·3 cites·9 claims
- 2345US5661068AMethod of fabricating a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Aug 26, 1997·9 cites·5 claims
- 2443US2010173465A1Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the samePANASONIC CORP·Filed 2010·Application pending·0 cites
- 2541US6974987B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 13, 2005·4 cites·15 claims
- 2639US7057236B2Semiconductor device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 6, 2006·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →