Inventor · disambiguated record
Geert Eneman
Also filed as: ENEMAN GEERT
19 granted patents·5 pending applications·74 citations·filing 2009–2024
92Inventor score
Top patents by PatentIndex Score
24 records- 0192US9171904B2FinFET device with dual-strained channels and method for manufacturing thereofIMEC·Filed 2013·Granted Oct 27, 2015·13 cites·13 claims
- 0289US9006705B2Device with strained layer for quantum well confinement and method for manufacturing thereofIMEC·Filed 2013·Granted Apr 14, 2015·8 cites·15 claims
- 0388US9117777B2Methods for manufacturing semiconductor devicesIMEC·Filed 2013·Granted Aug 25, 2015·10 cites·17 claims
- 0487US9406777B2Method for manufacturing a transistor deviceIMEC VZW·Filed 2015·Granted Aug 2, 2016·5 cites·14 claims
- 0586US9368498B2FinFET device with dual-strained channels and method for manufacturing thereofIMEC VZW·Filed 2015·Granted Jun 14, 2016·4 cites·12 claims
- 0686US8119488B2Scalable quantum well device and method for manufacturing the sameHELLINGS GEERT·Filed 2011·Granted Feb 21, 2012·12 cites·20 claims
- 0784US9633891B2Method for forming a transistor structure comprising a fin-shaped channel structureIMEC VZW·Filed 2015·Granted Apr 25, 2017·4 cites·12 claims
- 0883US7915608B2Scalable quantum well device and method for manufacturing the sameIMEC·Filed 2009·Granted Mar 29, 2011·9 cites·11 claims
- 0979US9698262B2Vertical fin field-effect semiconductor deviceIMEC VZW·Filed 2016·Granted Jul 4, 2017·3 cites·18 claims
- 1076US9437681B2Dual channel FinFET CMOS device with common strain-relaxed buffer and method for manufacturing thereofIMEC VZW·Filed 2015·Granted Sep 6, 2016·2 cites·19 claims
- 1172US9257539B2Method for manufacturing transistor and associated deviceIMEC VZW·Filed 2014·Granted Feb 9, 2016·3 cites·7 claims
- 1267US9876080B2Strained group IV channelsIMEC VZW·Filed 2016·Granted Jan 23, 2018·1 cites·18 claims
- 1363US2025194131A1Method for Forming a Semiconductor DeviceIMEC VZW·Filed 2024·Application pending·0 cites
- 1452US2024178051A1Method for Forming a Semiconductor DeviceIMEC VZW·Filed 2023·Application pending·0 cites
- 1549US12336239B2Tensile strained semiconductor monocrystalline nanostructureIMEC VZW·Filed 2021·Granted Jun 17, 2025·0 cites·18 claims
- 1649US11387350B2Semiconductor fin structure and method of fabricating the sameIMEC VZW·Filed 2019·Granted Jul 12, 2022·0 cites·15 claims
- 1747US11088263B2Method of forming vertical field effect transistor deviceIMEC VZW·Filed 2020·Granted Aug 10, 2021·0 cites·17 claims
- 1844US9064702B2Method for manufacturing semiconductor devicesIMEC·Filed 2013·Granted Jun 23, 2015·0 cites·14 claims
- 1941US12432985B2Strained semiconductor monocrystalline nanostructureIMEC VZW·Filed 2021·Granted Sep 30, 2025·0 cites·22 claims
- 2041US2020083116A1Gate, Contact, and Fin Cut MethodIMEC VZW·Filed 2019·Application pending·0 cites
- 2141US2013154112A1Method for Forming Isolation Trenches in Micro-Bump Interconnect Structures and Devices Obtained ThereofIMEC·Filed 2012·Application pending·0 cites
- 2240US8698129B2Implant free quantum well transistor, method for making such an implant free quantum well transistor and use of such an implant free quantum well transistorIMEC·Filed 2012·Granted Apr 15, 2014·0 cites·9 claims
- 2336US2019081156A1Method for Forming a Vertical Channel Device, and a Vertical Channel DeviceIMEC VZW·Filed 2018·Application pending·0 cites
- 2435US10636882B2Method for forming a semiconductor structure and a semiconductor structure manufactured thereofIMEC VZW·Filed 2018·Granted Apr 28, 2020·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →