Inventor · disambiguated record
Evgueniy Stefanov
Also filed as: STEFANOV EVGUENIY · STEFANOV EVGUENIY N · STEFANOV EVGUENIY NIKOLOV
21 granted patents·5 pending applications·212 citations·filing 2000–2024
94Inventor score
Files withSEMICONDUCTOR COMPONENTS IND9NXP USA INC8FREESCALE SEMICONDUCTOR INC4REYNES JEAN MICHEL2ZITOUNI MOANISS2
Top patents by PatentIndex Score
26 records- 0191US9559198B2Semiconductor device and method of manufacture thereforFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Jan 31, 2017·16 cites·20 claims
- 0290US9472662B2Bidirectional power transistor with shallow body trenchFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 18, 2016·7 cites·19 claims
- 0388US6448625B1High voltage metal oxide device with enhanced well regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Sep 10, 2002·46 cites·15 claims
- 0485US6953980B2Semiconductor filter circuit and methodSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Oct 11, 2005·37 cites·19 claims
- 0583US10211822B2Circuit arrangement for fast turn-off of bi-directional switching deviceNXP USA INC·Filed 2017·Granted Feb 19, 2019·4 cites·10 claims
- 0682US10411004B2Semiconductor device suitable for electrostatic discharge (ESD) protectionNXP USA INC·Filed 2018·Granted Sep 10, 2019·3 cites·20 claims
- 0782US6773997B2Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllabilitySEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Aug 10, 2004·33 cites·8 claims
- 0881US9178027B1Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2014·Granted Nov 3, 2015·5 cites·20 claims
- 0977US10348296B2Body-control-device for a bi-directional transistorNXP USA INC·Filed 2018·Granted Jul 9, 2019·3 cites·11 claims
- 1075US6492679B1Method for manufacturing a high voltage MOSFET device with reduced on-resistanceSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Dec 10, 2002·21 cites·4 claims
- 1169US10629715B2Unidirectional ESD protection with buried breakdown thyristor deviceNXP USA INC·Filed 2018·Granted Apr 21, 2020·1 cites·20 claims
- 1268US10727221B2ESD protection device, semiconductor device that includes an ESD protection device, and method of manufacturing sameNXP USA INC·Filed 2019·Granted Jul 28, 2020·1 cites·17 claims
- 1365US6773977B1Method of forming a diode for integration with a semiconductor device and method of forming a transistor device having an integrated diodeFREESCALE SEMICONDUCTOR INC·Filed 2000·Granted Aug 10, 2004·13 cites·8 claims
- 1464US7955929B2Method of forming a semiconductor device having an active area and a termination areaFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 7, 2011·3 cites·20 claims
- 1563US6989572B2Symmetrical high frequency SCR structureSEMICONDUCTOR COMPONENTS IND·Filed 2003·Granted Jan 24, 2006·12 cites·8 claims
- 1660US8217448B2Semiconductor device and method of forming a semiconductor deviceSTEFANOV EVGUENIY·Filed 2007·Granted Jul 10, 2012·4 cites·20 claims
- 1760US2025112630A1SwitchNXP USA INC·Filed 2024·Application pending·0 cites
- 1856US8188539B2Field-effect semiconductor device and method of forming the sameREYNES JEAN-MICHEL·Filed 2005·Granted May 29, 2012·3 cites·20 claims
- 1953US11848553B2Electro-static discharge device with integrated capacitanceNXP USA INC·Filed 2021·Granted Dec 19, 2023·0 cites·19 claims
- 2051US11640964B2Integrated capacitors in an integrated circuitNXP USA INC·Filed 2021·Granted May 2, 2023·0 cites·20 claims
- 2149US9419128B2Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2015·Granted Aug 16, 2016·0 cites·20 claims
- 2237US8779465B2Semiconductor device and method of forming a semiconductor deviceREYNES JEAN-MICHEL·Filed 2006·Granted Jul 15, 2014·0 cites·20 claims
- 2336US2002098637A1High voltage laterally diffused metal oxide semiconductor with improved on resistance and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 2433US2002125530A1High voltage metal oxide device with multiple p-regionsSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 2533US2002130361A1Semiconductor device with laterally varying p-top layersSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 2633US2002130360A1High voltage MOS device with no field oxide over the p-top regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →