Inventor · disambiguated record
Maximilian Roesch
Also filed as: ROESCH MAXIMILIAN
35 granted patents·2 pending applications·86 citations·filing 2007–2024
96Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG26INFINEON TECHNOLOGIES AUSTRIA4HIRLER FRANZ2INFINEON TECHNOLOGIES AG2BLANK OLIVER1
Top patents by PatentIndex Score
37 records- 0195US10510836B1Gate trench device with oxygen inserted si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Dec 17, 2019·13 cites·20 claims
- 0294US10573742B1Oxygen inserted Si-layers in vertical trench power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 25, 2020·11 cites·24 claims
- 0391US10580888B1Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 3, 2020·7 cites·22 claims
- 0490US11031466B2Method of forming oxygen inserted Si-layers in power semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jun 8, 2021·2 cites·20 claims
- 0589US10741638B2Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 11, 2020·4 cites·13 claims
- 0686US10861966B2Vertical trench power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 8, 2020·3 cites·20 claims
- 0785US9570553B2Semiconductor chip with integrated series resistancesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Feb 14, 2017·6 cites·29 claims
- 0885US9252251B2Semiconductor component with a space saving edge structureHIRLER FRANZ·Filed 2011·Granted Feb 2, 2016·7 cites·23 claims
- 0982US8093655B2Integrated circuit including a trench transistor having two control electrodesHIRLER FRANZ·Filed 2007·Granted Jan 10, 2012·10 cites·10 claims
- 1079US11031478B2Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufactureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jun 8, 2021·2 cites·28 claims
- 1176US8362551B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2011·Granted Jan 29, 2013·4 cites·22 claims
- 1275US2024194754A1Semiconductor device and corresponding methods of manufactureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1374US10181511B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 15, 2019·2 cites·24 claims
- 1472US7880226B2Integrated circuit device with a semiconductor body and method for the production of an integrated circuit deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Feb 1, 2011·4 cites·9 claims
- 1570US11682704B2Method of producing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 1670US8487370B2Trench semiconductor device and method of manufacturingBLANK OLIVER·Filed 2010·Granted Jul 16, 2013·3 cites·25 claims
- 1769US11699725B2Semiconductor device having an alignment layer with mask pitsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jul 11, 2023·0 cites·20 claims
- 1869US9859385B2Processing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jan 2, 2018·1 cites·20 claims
- 1968US8975696B2Lateral MOS power transistor having backside terminal electrodeHAEBERLEN OLIVER·Filed 2011·Granted Mar 10, 2015·2 cites·16 claims
- 2067US10529845B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jan 7, 2020·1 cites·20 claims
- 2165US2021273067A1Semiconductor device having body contact regions and corresponding methods of manufactureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Application pending·0 cites
- 2264US11545545B2Superjunction device with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 2362US10868172B2Vertical power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 15, 2020·0 cites·23 claims
- 2462US8114743B2Integrated circuit device with a semiconductor body and method for the production of an integrated circuit deviceHILLER ULI·Filed 2010·Granted Feb 14, 2012·2 cites·14 claims
- 2562US7833862B2Semiconductor device and method for forming sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 16, 2010·2 cites·12 claims
- 2661US11316020B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Apr 26, 2022·0 cites·8 claims
- 2756US10790353B2Semiconductor device with superjunction and oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Sep 29, 2020·0 cites·11 claims
- 2855US10249723B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 2, 2019·0 cites·20 claims
- 2953US10903321B2Semiconductor device and method of manufacturing a semiconductor device using an alignment layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 26, 2021·0 cites·14 claims
- 3051US10068848B2Semiconductor chip with integrated series resistancesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Sep 4, 2018·0 cites·20 claims
- 3151US9484410B2Lateral MOS power transistor having front side drain electrode and back side source electrodeINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 1, 2016·0 cites·10 claims
- 3251US8044459B2Semiconductor device with trench field plate including first and second semiconductor materialsINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Oct 25, 2011·0 cites·22 claims
- 3350US11908904B2Planar gate semiconductor device with oxygen-doped Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Feb 20, 2024·0 cites·22 claims
- 3449US9627520B2MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell arrayINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 18, 2017·0 cites·29 claims
- 3546US12439674B2Semiconductor power device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Oct 7, 2025·0 cites·12 claims
- 3642US9614044B2Semiconductor device with current sensorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Apr 4, 2017·0 cites·20 claims
- 3741US9543398B2Semiconductor switching device including charge storage structureINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 10, 2017·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →